Strain distributions in group IV and III-V semiconductor quantum dots

• Autorzy: Wijewardena Gamalath K. A. I. L. , Fernando M.A.I.P.
• Języki publikacji: EN

Abstrakty

EN

A theoretical model was developed using GreenˇŚs function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger positive strain in normal direction which tends to zero beyond 6nm was observed for all three types while the strains parallel to the substrate were negative. For all the three types of quantum dots hydrostatic strain and biaxial strain along x and z directions were not linear but described a curve with a maximum positive value near the base of the quantum dot. The hydrostatic strain in x-direction is mostly confined within the quantum dot and practically goes to zero outside the edges of the quantum dot. For all the three types, the maximum hydrostatic and biaxial strains occur in x-direction around �{1nm and around 2nm in z-direction. The negative strain in x-direction although realtively weak penetrate more deeper to the substrate than hydrostatic strain.The group IV substrate gave larger hydrostatic and biaxial strains than the group III-V semiconductor combinations and InAs /GaAs was the most stable. The results indicated that the movements of atoms due to the lattice mismatch were strong for group III-V.

Słowa kluczowe

EN

quantum dot; strain distribution; hydrostatic strain; biaxial strain

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2013
• Tom: Vol. 2
• Strony: 36--48
• Opis fizyczny: Bibliogr. 11 poz., tab., rys.

Twórcy

autor

Wijewardena Gamalath K. A. I. L.

autor

Fernando M.A.I.P.

• Department of Physics, University of Colombo, Colombo 3, Sri Lanka,

Bibliografia

• 1. J. Stangl, V. Holý, G. Bauer, Rev. Mod. Phys. 76 (2004) 725-783.
• 2. C. Prior, Journal of Applied Physics 83 (1997) 2548-2553.
• 3. J. R. Downs, D. A. Faux, E. P. O'reilly, Journal of Applied Physics 81 (1997) 6700-6702.
• 4. A. D. Andreev, J. R. Downs, D. A. Faux, E. P. O'reilly, Journal of Applied Physics 86 (1999) 297-305.
• 5. D. A. Faux, G. S. Pearson, Journal of Applied Physics 62 (2000) 4798-4801. G. S. Pearson, D. A. Faux, Journal of Applied Physics 88 (2000) 730-736.
• 6. R. Maranganthi, P. Sharma, A Review of strain field calculation in embedded quantum dots and wires, Handbook of Theoretical and Computational Nanotechnology Edited by Michael Rieth and Wolfram Schommers (American Scientific Publishers, 2005) Chapter 118, Volume 1: Pages (1–44). ISBN: 1-58883-042-X.
• 7. C. Y. Wang, M. Denda, E. Pan, International Journal of Solids and Structures, Vol. 43 ( 2006) 7593-7608. J. Chu, J. Wang, Journal of Applied Physics 98 (2005) 1-7.
• 8. S. A. Komarov, Potential of strain induced semiconductor quantum dots for device applications, Ph.D. thesis, Stanford University (2002).
• 9. J. D. Eshelby, Elastic inclusions and inhomogeities, Edited by I. N. Sneddon, R. Hill (North Holland, 1961), Progress in Solid Mechanics, Vol. 2 pp. 89-140.
• 10. T. Mura, Micromechanics of defects in solids (Martinus Nijhoff, Dordrecht,1987) 2nd edition.
• 11. L. D. Landau, E. M. Lifshitz, “The Classical Theory of Fields.” (ButterworthHeinemann, 1980) Vol. 2.