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Protective coatings deposited on polycarbonates by pulsed dielectric barrier discharge

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Organo-silicon layers were deposited on polycarbonates (PC) substrates from the gas phase by using pulsed dielectric barrier discharge. Very short (~ 20 ns) pulses of high power discharge (-0.4 MW) were applied. The process was carried out under atmospheric pressure in a helium-oxygen plasma. Tetraethoxysilane (TEOS) vapours were used as a source of silicon. The surface morphology, composition and thickness of the layers were studied by means of AFM/TM, FTIR and SEM. The organo-silicon layers were found to be transparent, smooth and uniform over the whole substrate surface. The amplitude of the deviations from surface uniformity did not exceed 30 nm. The thickness of the deposited layers was of the order of ~2 |j.m.
Rocznik
Strony
30--34
Opis fizyczny
Bibliogr. 13 poz., rys., tab.
Twórcy
  • Industrial Chemistry Research Institute, Rydygiera 8, 01-793 Warszawa, Poland
autor
  • Industrial Chemistry Research Institute, Rydygiera 8, 01-793 Warszawa, Poland
  • Institute of Plasma Physics and Laser Microfusion, Hery 23, Warszawa, Poland
  • Warsaw Univeristy of Technology, Department of Chemistry, Warszawa, Poland
Bibliografia
  • (1) Tyczkowski J., Cienkie warstwy polimerów plazmowych, WN-T, Warszawa, 1990.
  • (2) Tyczkowski J., Odrobina E., Kazimierski P., Electronic properties of plasma-deposited films prepared from tetramethyl-silane, Thin Solid Films, 209, 1992, 250.
  • (3) Hatanaka Y., Sano K., Aoki T., Wróbel A. M., Experiments and analyses of SiC thin film depositition from organo-silicon by a remote plasma method, Thin Solid Films, 368, 2000, 287.
  • (4) Vallée C., Goullet A., Granier A., van der Lee A., Durand J., Marličre C., Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas, Journal of Non-Crystalline Solids, 272, 2000, 163.
  • (5) Schmidt-Szałowski K., Fabianowski W., Sentek J., Rżanek-Boroch Z., Powłoki nieorganiczne wytwarzane techniką elektroplazmową, Przem. Chem., 77, 1998, 253.
  • (6) Schmidt-Szałowski K., Fabianowski W., Rżanek-Boroch Z., Sentek J., PE-CVD of SiO2 thin films at atmospheric pressure by discharges stabilized with a dielectric barrier, J. Chem. Vapor Dep., 6, 1998, 183.
  • (7) T. Opalińska, Szymański A., Effect of the Permittivity of Ferroelectric Electrodes on Macroscopic Characteristics of the Barrier Discharge, Symp. Proc. of 14th ISPC, 1999, 801.
  • (8) T. Opalińska, Effect of configuration and permittivity of dielectric electrode on macroscopic characteristics of barrier discharge, Symp. Proc. of HAKONE VII, 2000, 98.
  • (9) Ulejczyk B., Opalińska T., Schmidt-Szałowski K., Polaczek J., Karpiński L., Pawłowski S., Sposób osadzania na powierzchni dielektryka warstwy zawierającej związki krzemu, Polish Patent Appln. No. P-347771.
  • (10) Spitzmüller J., Braun J., Rauscher H., Behm R. J., Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7x7), Surface Science., 400, 1998, 356.
  • (11) Ullmann's Encyclopedia of Industrial Chemistry, fifth edition, 1993.
  • (12) Kawabe M., Tasaka S., Inagaki N., Effects of nitrogen plasma treatment of pressure-sensitive adhesive layer surfaces on their peel adhesion behavior, J. Adhesion Sci. Technol., 13, 1999, 573.
  • (13) Janca J., Czernichowski A., Wool treatment in gas flow from gliding discharge plasma at atmospheric pressure, Surface and Coatings Technology, 98, 1998, 1112.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPS3-0002-0065
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