Evolution and recent advances in RF/microwave transistors

• Autorzy: Liou J.J. , Schwierz F.
• Języki publikacji: EN

Abstrakty

EN

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

Słowa kluczowe

EN

microwave devices; RF devices; heterostructures; HEMT; HBT; frequency limits; RF CMOS

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2004
• Tom: nr 1
• Strony: 99--105
• Opis fizyczny: Bibliogr. 43 poz., tab., rys.

Twórcy

autor

Liou J.J.

• School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32186, USA
• Department of Electronics Science and Technology, Huazhong University of Science and Technology, Wuhan, P. R. China

autor

Schwierz F.

• Fachgebiet Festkörperelektronik, Technische Universität Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany

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