Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers

• Autorzy: Walczak J. , Majkusiak B.
• Języki publikacji: EN

Abstrakty

EN

Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.

Słowa kluczowe

EN

ultrathin SOI; scattering mechanisms; electron mobility

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2004
• Tom: nr 1
• Strony: 39--49
• Opis fizyczny: Bibliogr. 21 poz., tab., rys.

Twórcy

autor

Walczak J.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

autor

Majkusiak B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

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