Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator

• Autorzy: Linkowski A. , Łukasiak L. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied.

Słowa kluczowe

EN

base transit time; cut-off frequency; HBT; SiGe-base

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2004
• Tom: nr 1
• Strony: 36--38
• Opis fizyczny: Bibliogr. 3 poz., rys.

Twórcy

autor

Linkowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

autor

Łukasiak L.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

Bibliografia

• [1] "APSYS user's manual, version 3.6", Crosslight Software Inc., Gloucester, Canada, 2000.
• [2] V. Palankovski and S. Selberherr, "Critical modeling issues of SiGe semicondutor devices", J. Telecommun. Inform. Technol., no. 1, pp. 15-25, 2004.
• [3] J. S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, "SiGe HBTs with cut-off frequency of 350 GHz", IEDM Tech. Dig., 2002.