Critical modeling issues of SiGe semiconductor devices

• Autorzy: Palankovski V. , Selberherr S.
• Języki publikacji: EN

Abstrakty

EN

We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.

Słowa kluczowe

EN

SiGe HBT; numerical simulation; band gap; mobility; small-signal simulation; S-parameters

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2004
• Tom: nr 1
• Strony: 15--25
• Opis fizyczny: Bibliogr. 52 poz., tab., rys.

Twórcy

autor

Palankovski V.

• Institute for Microelectronics, TU Vienna, Gusshausstr. 27-29, A-1040 Vienna, Austria

autor

Selberherr S.

• Institute for Microelectronics, TU Vienna, Gusshausstr. 27-29, A-1040 Vienna, Austria

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