Silicon microelectronics: where we have come from and where we are heading

• Autorzy: Łukasiak L. , Jakubowski A. , Pióro Z.
• Języki publikacji: EN

Abstrakty

EN

The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.

Słowa kluczowe

EN

MOSFET; scaling; SiGe; SOI

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2004
• Tom: nr 1
• Strony: 7--14
• Opis fizyczny: Bibliogr. 29 poz., tab., rys.

Twórcy

autor

Łukasiak L.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

autor

Pióro Z.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa st 75, 00-662 Warsaw

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