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Tytuł artykułu

Reliability and low-frequency noise measurements of InGaAsP MQW buried-heterostructure lasers

Treść / Zawartość
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A laser diode reliability test based on the measurements of the low-frequency optical and electrical noise, and their correlation factor changes during short-time ageing is presented. The noise characteristics reveal obvious differences between the stable and unreliable lasers operated near the threshold region. An excessive Lorentzian type noise with negative correlation factor at the threshold could be one of the criteria for identifying unreliable lasers. The behavior of unreliable lasers during ageing could be explained by migration of point recombination centres at the interface of an active layer, and by the formation of defect clusters.
Rocznik
Tom
Strony
24--29
Opis fizyczny
Bibliogr. 7 poz., rys.
Twórcy
  • Semiconductor Physics Institute, Vilnius, Lithuania
autor
  • Department of Radiophysics Vilnius University Sauletekio 9 Vilnius, Lithuania
autor
  • Department of Radiophysics Vilnius University Sauletekio 9 Vilnius, Lithuania
  • Department of Radiophysics Vilnius University Sauletekio 9 Vilnius, Lithuania
  • Department of Radiophysics Vilnius University Sauletekio 9 Vilnius, Lithuania Gregory Letal
autor
  • Bookham Technologies Ottawa, Ontario, Canada Robert Mallard
autor
  • Bookham Technologies Ottawa, Ontario, Canada
autor
  • Bookham Technologies Ottawa, Ontario, Canada
Bibliografia
  • [1] K. Takemasa, M. Kubota, T. Munakata, and H. Wada, “1.3-μm Al-GaInAs buried-heterostructure lasers”, IEEE Photon. Technol. Lett., vol. 11, no. 8, pp. 949–951, 1999.
  • [2] M. Fukuda and G. Iwane, “Degradation of active region in In-GaAsP/InP buried heterostructure lasers”, J. Appl. Phys., vol. 58, no. 8, pp. 2932–2936, 1985.
  • [3] L. K. J. Vandamme, P. J. L. Herve, and R. Alabedra, “A decade of low frequency noise in optoelectronics and photonic component”, in Proc. 14th ICNF, Noise Phys. Syst. 1/f Fluct. Eds. C. Claeys and E. Simoen, Lauven, Belgium, 1997, pp. 495–502.
  • [4] G. Hartler, U. Golze, and K. Paschke, “Extended noise analysis – a novel tool for reliability screening”, Microelectron. Reliab., vol. 38, pp. 1193–1198, 1998.
  • [5] L. K. J. Vandamme, “Noise as a diagnostic tool for quality and reliability of electron devices”, IEEE Trans. Electron. Dev., vol. 41, no. 11, pp. 2176–2187, 1994.
  • [6] G. Letal, S. Smetona, R. Mallard, J. Matukas, V. Palenskis, and S. Pralgauskait ̇e, “Reliability and low-frequency noise measurements of InGaAsP MQW buried-heterostructure lasers”, in Proc. 16th ICNF Noise Phys. Syst. 1/f Fluct., Ed. G. Bosman, New Jersey, 2001, pp. 743–746.
  • [7] S. Pralgauskait ̇e, V. Palenskis, J. Matukas, ˇC. Pavasaris, E. Šermukš-nis, J. G. Simmons, R. Sobiestianskas, and S. Smetona, “Optical and electrical characteristics of DFB MQW laser diodes”, Mat. Sci., vol. 7, no. 2, pp. 80–86, 2001.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPS2-0019-0035
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