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Synthesis method for distributed amplifiers

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Języki publikacji
EN
Abstrakty
EN
New design method is presented for distributed amplifiers (DA). It is shown that by proper design of the applied transmission lines (TL) between the active devices the image impedance and the cut-off frequency (COF) of the input or output line of the DA can be independently tuned. As a consequence, the phase mismatch between the lines of the DA can be adjusted independently from the termination conditions and from the capacitances of the applied transistor and thus flat gain characteristic can be achieved. The method is well applicable for nearly unilateral devices like HBTs [1] and yields the highest gain-bandwidth product.
Rocznik
Tom
Strony
20--23
Opis fizyczny
Bibliogr. 5 poz., rys.
Twórcy
autor
Bibliografia
  • [1] Bin Li and S. Prasad, “Harmonic and two-tone intermodulation distortion analyses of the inverted InGaAs/InAlAs/InP HBT”, IEEE Trans. Microw. Theory Techn., vol. 45, pp. 1135–1137, 1997.
  • [2] T. T. Y. Wong, Fundamentals of Distributed Amplification. Boston, London: Artech House, 1993.
  • [3] J. B. Beyer, S. M. Prasad, R. C. Becker, J. E. Nordman, and G. K. Hohenwarter, “MESFET distributed amplifier design guidelines”, IEEE Trans. Microw. Theory Techn., vol. 32 pp. 268–275, 1984.
  • [4] A. Zólomy, A. Hilt, G. J ́aró, and T. Berceli, “The effect of parasitic inductances in distributed amplifiers”, in Proc. 12th Int. Conf. MIKON’98, Kraków, Poland, 1998, vol. 3, pp. 463–467.
  • [5] A. Zólomy, “Gain-bandwidth performance comparison of lumped and distributed element eistributed amplifiers”, in Proc. 13th Int. Conf. MIKON’2000, Wrocław, Poland, 2000, vol. 1, pp. 101–104.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPS2-0019-0034
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