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We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which is then realised in hybrid technology. Measurement results show - 6% shift in the frequency but an acceptable agreement in the output power. A detailed analysis shows that the frequency shift arises mainly from inadequate CAD models in the K band, for the microstrip components employed in our design.
Rocznik
Tom
Strony
15--19
Opis fizyczny
Bibliogr. 18 poz., rys.
Twórcy
autor
- Institute of Electronic Systems, Warsaw University of Technology
autor
- Fachgebiet Hochfrequenztechnik University of Kassel Wilhelmsh ̈oher Allee 73 D-34121 Kassel, Germany
autor
- Fachgebiet Hochfrequenztechnik University of Kassel Wilhelmsh ̈oher Allee 73 D-34121 Kassel, Germany
autor
- Institute of Electronic Systems Warsaw University of Technology Nowowiejska st 15/19 00-665 Warsaw, Poland
Bibliografia
- [1] I. Schmale, “Entwicklung eines konsistenten elektrothermischen Grosssignalmodells für Feldeffekttransistoren als Grundlage für den zuverlässigen Entwurf monolitischer Frequenzverdoppler”. Ph.D. thesis, Univeristät Gesamthochschule Kassel, Kassel, 1999.
- [2] E. Wasige, H. J. de la Torre, I. Ak-Layla, and G. Kompa, “An analytical design procedure for microwave oscillators based on S-parameters”, in Int. IEEE Worksh. Experim. Bas. FET Dev. Model. Relat. Nonlin. Circ. Des., Universität Gesamthochschule Kassel, Kassel, 1997, pp. 41.1–41.3.
- [3] G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design. Englewood Cliffs, NJ: Prentice-Hall, 1997.
- [4] R. Howald, “A 24 GHz HEMT microstrip oscillator using linear and nonlinear CAD techniques”, Microw. J., pp. 80–93, May 1994.
- [5] S. Savaria and P. Champagne, “Linear simulators for use in oscillator design”, Microw. J., pp. 98–105, May 1995.
- [6] M. Odyniec, “Oscillator stability analysis”, Microw. J., pp. 66–76, June 1999.
- [7] A. Lewandowski, “Generator sygnału sinusoidalnego 24 GHz”. Praca magisterska, Wydział Elektroniki i Technik Informacyjnych, Politechnika Warszawska, Warszawa, 2001 (M.Sc. thesis in Polish).
- [8] H. Abe, “A GaAs MESFET oscillator quasi-linear design method”, IEEE Trans. Microw. Theory Techn., vol. MTT-34, pp. 19–25, 1986.
- [9] A. V. Grebennikov, “Microwave transistor oscillators: an analytic approach to simplify computer-aided design”, Microw. J., pp. 292–300, May 1999.
- [10] P. André, J. Dienot et al., “Microwave oscillator design from load cycle optimisation – application to MMIC GaAs MESFET oscillator”, in Proc. 24th EuMC, 1994, pp. 831–835.
- [11] I. Angelov, H. Zirath, and N. Rorsman, “A new empirical model for HEMT and MESFET devices”, IEEE Trans. Microw. Theory Techn., vol. MTT-40, pp. 2258–2266, 1992.
- [12] U. Schaper and A. Werthof, “Large-signal HEMT model for resitive mixer design”, in Int. IEEE Worksh. Experim. Bas. FET Dev. Model. Relat. Nonlin. Circ. Des., Universität Gesamthochschule Kassel, Kassel, 1997, pp. 26.1–26.5.
- [13] F. Lin and G. Kompa, “FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search –a new concept”, IEEE Trans. Microw. Theory Techn., vol. MTT-42, pp. 1114–1120, 1994.
- [14] W. Mwema and G. Kompa, “A new simplified and reliable HEMT modelling approach using pinched cold FET S-parameters”, in Proc. MTTS 2000.
- [15] A. Gelb and W. Vander Velde, Multiple-Input Describing Functions and Nonlinear System Design. New York: McGraw-Hill Book Company, 1968.
- [16] K. Kurokawa, “Some basic characteristics of broadband negative resistance oscillator circuits”, Bell Syst. Tech. J., pp. 1937–1955, July-Aug. 1969.
- [17] A. Lewandowski and W. Wiatr, “Verification of CAD models for microstrip components using FD-TD method”, in Proc. 14th Microw. Conf. MIKON-2002, Gdańsk, Poland, May 2002, pp. 357–360.
- [18] E. Wasige, G. Kompa, F. van Raay, W. Scholz, I. Rangelow, F. Shi, R. Kassing, R. Meyer, and M.-C. Amann, “A new technological oncept for optimum circuit design at microwave and milimeterwave frequencies”, in Int. IEEE Worksh. Experim. Bas. FET Dev. Model. Relat. Nonlin. Circ. Des., Universität Gesamthochschule Kassel, Kassel, 1997, pp. 23.1–23.5.
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bwmeta1.element.baztech-article-BPS2-0019-0033