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Warianty tytułu
Zagadnienie ładunku przestrzennego z uwzględnieniem spułapkowanego ładunku dodatniego. Przypadek baterii słonecznej
Języki publikacji
Abstrakty
A theoretical description of an interior of a solid for space charge is continued. Carrier generation and recombination conditions are considered. On this basis it is found that the metal-solid-metal system can act as a perfect blocking diode. A solar cell problem is discussed.
Problem formowania się ładunku przestrzennego w ciele stałym jest kontynuowany. Rozważa się warunki generacji i rekombinacji nośników. Na tej podstawie stwierdza się, że układ metal-ciało niemetaliczne-metal może działać jak idealna dioda blokująca. Rozwija się problematykę baterii słonecznej.
Czasopismo
Rocznik
Tom
Strony
243--267
Opis fizyczny
Bibliogr. 28 poz., rys.
Twórcy
autor
- Wrocław University of Technology, Institute of Electrical Engineering and Technology
Bibliografia
- 1. Świstacz B.: Bipolar space-charge problem for semiconductors and insulators. J. Phys.: Condens. Matter, vol. 7, 1995, pp. 2563-2585.
- 2. Świstacz B.: Carrier generation and the switching phenomenon. Further theoretical description. J. Phys.: Condens. Matter, vol. 7, 1995, pp. 10037-10048.
- 3. Świstacz B.: New solution to the problem of bipolar injection in insulator and semiconductor devices. Solids with an arbitrary distribution of defects. J. Electrostatics, vol. 36, 1995, pp. 175-193.
- 4. Świstacz B.: Further theoretical description for double injection in the metal-solid-metal system. Arch. Electr. Eng., Warsaw, Vol. XLV, No 2, 1996, pp. 175-189.
- 5. Świstacz B.: Development of a bipolar space charge-limited current problem for metal-solid-meld system. Arch. Electr. Eng., Warsaw, Vol. XLVI, No 2, 1997, pp. 199-217.
- 6. Świstacz B.: A small signal problem and anomalous electric conduction in the metal-solid-metal system. Further analytical and numerical results. Arch. Electr. Eng., Warsaw, Vol. XLVI, No 3, 1997, pp. 293-319.
- 7. Athaval C.S., Latham R.V.: Switching and other Non-Linear Phenomena Associated with Prebreakdown Electron Emission Currents. J. Phys. D.: Appl. Phys., Vol. 17, 1984, pp. 1029-1034.
- 8. Shatzkes M., Av-Ron M., Anderson R.M.: On the nature of conduction and switching in SiO2, J. Appl. Phys., Vol. 45, 1974, pp. 2065-2077.
- 9. Wang Y.H., Houng M.P., We i H.C.: Observation of N-Shaped and S-Shaped Negative Differential Resistance Behavior in AlGaAs GaAs Resonant Tunneling Structure. Solid State Electron., Vol. 34,1991, pp. 413-418.
- 10. Muzumdar P., Mirchandan i K., Milshtein S.: Observation of Negative Differential Resistance in GaAs Field-Effect Transistor. J. Appl. Phys., Vol. 70, 1991, pp. 1063-1065.
- 11. Eizenberg M., Hovel H.J.: Space-Charge-Limited-Current Measurements in Semi-Insulating GaAs. J. Appl. Phys., Vol. 69, 1991, pp. 2256-2263.
- 12. Houng M.P et al.: The Negative Differential Resistance Behavior in Delta-Doped GaAs Structure Due to Resonant Interband Tunneling. J. Appl. Phys., Vol. 17, 1992, pp. 780-782.
- 13. Loutfy R.O., Sharp J.H., Hsiao C.K., Ho R.: Phtalocyanine organic solar cells. Indium/x-metal free phtalocyanine Schottky barriers. J. Appl. Phys., Vol. 52, 1981, pp. 5218-5230.
- 14. Kao K.C.: New theory of electrical discharge and breakdown in low-mobility condensed insulators. J. Appl. Phys., Vol. 55, 1984, pp. 752-755.
- 15. Patsch R.: Space-Charge Phenomena in Polyethylene at High Electric Fields. J. Phys. D.: Appl. Phys., Vol. 23, 1990, pp. 1497-1505.
- 16. Zakrzewski A., Godlewski M.: Isolated Iron and Chromium as Recombination Centers in ZnS. J. Appl. Phys., Vol. 67, 1990, pp. 2457-2461.
- 17. Lang S.B., Das-Gupta D.K.: Laser-inensity-modulation-method: A technique for determination of spatial distributions of polarisation and space charge in polymer electrets. J. Appl. Phys., Vol. 59, 1986, pp. 2151-2160.
- 18. Simon J., Andre J.: Molecular Semiconductors. Photoelectrical Properties and Solar Cells. Berlin, Springer, 1985.
- 19. Świstacz B.: The Idea of Surface recombination in Analysis of Bipolar-Charge Transport in Metal-Dielectric-Metal Configuration with a Thick Dielectric. Bull. Pol. Ac. Sci. Tech. Sci., Vol. 39, 1991, pp. 647-655.
- 20. Schilling R.B., Schachter H.: Neglecting Diffusion in Space-Charge-Limited Currents. J. Appl. Phys., Vol. 38, 1967, pp. 841-844.
- 21. Kao K.: Double injection in solids with non-ohmic contacts: I. Solids without defects. J. Phys.D.: Appl. Phys., Vol. 17, 1984, pp. 1443-1448.
- 22. Kao K.: Double injection in solids with non-ohmic contacts: II. Solids with defects. J. Phys. D.: Appl. Phys., Vol. 17, 1984, pp. 1449-1467.
- 23. Matsuura H., Okushi H.: Schottky barrier junctions of hydrogenated amorphous silicon-germanium alloys. J. Appl. Phys., Vol. 61, 1987, pp. 2871-2879.
- 24.Świstacz B.: Analysis of double injection in solids. Further results. Arch. Electr. Eng., Warsaw, Vol. XLIV, No 2, 1995, pp. 171-182.
- 25. Świstacz B.: Some conditions for strong asymmetric double injection in insulators and semiconductors. Arch. Elektrotech., Berlin, Vol. 78, 1995, pp. 111-116.
- 26. Świstacz B.: New solution to the problem of bipolar injection in insulator and semiconductor devices. Arch. Elektrotech., Berlin, Vol. 78, 1995, pp. 189-194.
- 27. Lampert M.A., Mark P.: Current injection in solids. Academic Press, New York and London, 1970.
- 28. Lampert M.A.: Citation classic-simplifief theory of space-charge-limited-currents in insulator with traps. CC/Phys. Chem., No 11, 1982, p. 24.
Typ dokumentu
Bibliografia
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