The 100 W class A power amplifier for L-band T/R module

• Autorzy: Wojtasiak W. , Gryglewski D. , Sędek E.
• Języki publikacji: EN

Abstrakty

EN

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P(1dB)>49 dBm, linear gain IS21I>10 dB, and transmitance deviations during the RF pulse: phase delta arg(S2)<0.9° and deltaP(out)<0.2 dB.

Słowa kluczowe

EN

modelling; MESFETs; finite difference time domain method; power transistors; microwave transistors

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2002
• Tom: nr 1
• Strony: 11--13
• Opis fizyczny: Bibliogr. 3 poz., tab., rys.

Twórcy

autor

Wojtasiak W.

• Institute of Radioelectronics, Warsaw University of Technology

autor

Gryglewski D.

• Institute of Radioelectronics Warsaw University of Technology Nowowiejska st 15/19 00-665 Warsaw, Poland

autor

Sędek E.

• Telecommunications Research Institute Poligonowa st 30 04-051 Warsaw, Poland

Bibliografia

• [1] J. L. B. Walker, Ed., High- Power GaAs FET Amplifiers. ArtechHouse, Inc. 1993.
• [2] W. Wojtasiak, T. Morawski, and E. Sędek, “A linear power amplifier for L-band T/R module”, in MIKON’96, Warsaw, Poland, 1996, vol. 2, pp. 547–501.
• [3] Final report for State Committee for Scientific Research, grant no. 8T11B03612, Warsaw, Sept. 1998