Tytuł artykułu
Treść / Zawartość
Pełne teksty:
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.
Słowa kluczowe
Rocznik
Tom
Strony
8--10
Opis fizyczny
Bibliogr. 1 poz., rys.
Twórcy
autor
- Institute of Electronic Materials Technology, Warsaw
autor
- Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland
autor
- Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland
autor
- Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland
autor
- Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland
autor
- Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America
autor
- Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America
autor
- Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America
Bibliografia
- [1] M. Nawaz, W. Strupiński, J. Stenarson, S. H. M. Persson, and H. Zirath, “Reliability evaluation of MOCVD grown AlInAs/GaInAs/InPHEMTs”, in 1999 IEEE Int. Reliab. Phys. Proc., IEEE Catalog no. 99CH36296.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPS2-0016-0070