MOVPE InP based material for millimeter and submillimeter wave generation and amplification

• Autorzy: Strupiński W. , Kosiel K. , Jasik A. , Jakieła R. , Jeleński A. , Kollberg E. , Dillner L. , Nawaz M.
• Języki publikacji: EN

Abstrakty

EN

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.

Słowa kluczowe

EN

epitaxy InP; MOVPE; microwave generation

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2002
• Tom: nr 1
• Strony: 8--10
• Opis fizyczny: Bibliogr. 1 poz., rys.

Twórcy

autor

Strupiński W.

• Institute of Electronic Materials Technology, Warsaw

autor

Kosiel K.

• Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland

autor

Jasik A.

• Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland

autor

Jakieła R.

• Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland

autor

Jeleński A.

• Institute of Electronic Materials Technology Wólczyńska st 133 01-919 Warsaw, Poland

autor

Kollberg E.

• Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America

autor

Dillner L.

• Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America

autor

Nawaz M.

• Department of Microwave Electronics Chalmers University of Technology SE-41296 Gothenburg, United States of America

Bibliografia

• [1] M. Nawaz, W. Strupiński, J. Stenarson, S. H. M. Persson, and H. Zirath, “Reliability evaluation of MOCVD grown AlInAs/GaInAs/InPHEMTs”, in 1999 IEEE Int. Reliab. Phys. Proc., IEEE Catalog no. 99CH36296.