PHEMT transistor models for accurate CAD of MMIC amplifiers

• Autorzy: Nosal Z.
• Języki publikacji: EN

Abstrakty

EN

Selected models of PHEMT transistors are presented for the popular Philips DO2AH process. The models are based on a set of measurements of transistor parameters and have been verified against measurements of fabricated MMIC amplifiers. The usefulness of particular models for the CAD of microwave circuits is discussed.

Słowa kluczowe

EN

monolithic microwave integrated circuits; transistor modeling

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2002
• Tom: nr 1
• Strony: 3--7
• Opis fizyczny: Bibliogr. 5 poz., rys.

Twórcy

autor

Nosal Z.

• Institute of Electronic Systems, Warsaw University of Technology,

Bibliografia

• [1] “Monolithic microwave integrated circuits – modeling, design and measurements”. Internal Report, Institute of Electronic Systems of the WUT, Warsaw, Jan. 1999 (in Polish).
• [2] GaAs IC design manual, foundry process D02AH (V2.0). Philips Microwave Limeil, Jan. 1997.
• [3] Serenade V.7.0 users guide and reference manual. Ansoft Corp., 1997.
• [4] A. Materka and T. Kacprzak, “Computer calculation of large-signal GaAs FET amplifier characteristics”, IEEE Trans. MTT, vol. MTT-33, no. 2, pp. 129–135, 1985.
• [5] D. Smith, “TOM-2: an improved model for GaAs MESFET”. Internal Memorandum. Triquint Semiconductor Inc., Feb. 1995.