Metastability problems in amorphous silicon

• Autorzy: Pietruszko S.M. , Kostana M.
• Języki publikacji: EN

Abstrakty

EN

The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.

Słowa kluczowe

EN

amorphous silicon; metastability; thermal quenching

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 76--79
• Opis fizyczny: Bibliogr. 4 poz., rys.

Twórcy

autor

Pietruszko S.M.

autor

Kostana M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology,