Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film

• Autorzy: Szmidt J. , Werbowy A. , Dusiński E. , Zdunek K.
• Języki publikacji: EN

Abstrakty

EN

The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low-energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [žm/žm] and 200/20 [žm/žm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures.

Słowa kluczowe

EN

MIS transistor; reliability; Al2O3 films; RPP method

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 70--75
• Opis fizyczny: Bibliogr. 6 poz., tab., rys.

Twórcy

autor

Szmidt J.

autor

Werbowy A.

autor

Dusiński E.

autor

Zdunek K.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology