Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris

• Autorzy: Janik T. , Jakubowski A. , Majkusiak B. , Korwin-Pawłowski M.
• Języki publikacji: EN

Abstrakty

EN

Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.

Słowa kluczowe

EN

MIS structures; ultrathin dielectrics; high-k dielectrics

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 65--69
• Opis fizyczny: Bibliogr. 3 poz., tab., rys.

Twórcy

autor

Janik T.

autor

Jakubowski A.

autor

Majkusiak B.

autor

Korwin-Pawłowski M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology,