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A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
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Tom
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61--64
Opis fizyczny
Bibliogr. 9 poz., rys.
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autor
autor
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- Institute of Electron Technology, Warsaw
Bibliografia
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Bibliografia
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bwmeta1.element.baztech-article-BPS2-0013-0063