A model of partially-depleted SOI MOSFETs in the subthreshold range

• Autorzy: Tomaszewski D. , Łukasiak L. , Jakubowski A. , Domański K.
• Języki publikacji: EN

Abstrakty

EN

A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.

Słowa kluczowe

EN

SOI MOSFET; subthreshold range; floating body; transconductance

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 61--64
• Opis fizyczny: Bibliogr. 9 poz., rys.

Twórcy

autor

Tomaszewski D.

autor

Łukasiak L.

autor

Jakubowski A.

autor

Domański K.

• Institute of Electron Technology, Warsaw