An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs

• Autorzy: Tomaszewski D. , Łukasiak L. , Gibki J. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.

Słowa kluczowe

EN

SOI MOSFET; floating body; avalanche ionization; recombination; displacement current; admittance

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 57--60
• Opis fizyczny: Bibliogr. 7 poz., rys.

Twórcy

autor

Tomaszewski D.

autor

Łukasiak L.

autor

Gibki J.

autor

Jakubowski A.

• Institute of Electron Technology, Warsaw,