Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures

• Autorzy: Pankov Y. , Druzhinin A.
• Języki publikacji: EN

Abstrakty

EN

A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.

Słowa kluczowe

EN

SOI; polysilicon layers; MLR

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 46--48
• Opis fizyczny: Bibliogr. 7 poz., rys.

Twórcy

autor

Pankov Y.

autor

Druzhinin A.

• Lviv Polytechnical University, Ukraine