On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors

• Autorzy: Druzhinin A. , Lavitska E. , Maryamova I. , Kogut I. , Khoverko Y.
• Języki publikacji: EN

Abstrakty

EN

The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.

Słowa kluczowe

EN

SOI; mechanical sensors; poly-Si piezoresistor; ZMR

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 40--45
• Opis fizyczny: Bibliogr. 7 poz., rys.

Twórcy

autor

Druzhinin A.

autor

Lavitska E.

autor

Maryamova I.

autor

Kogut I.

autor

Khoverko Y.

• Lviv Polytechnical University, Ukraine,