Challenges in ultrathin oxide layers formation

• Autorzy: Beck R.B. , Jakubowski A. , Łukasiak L. , Korwin-Pawłowski M.
• Języki publikacji: EN

Abstrakty

EN

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.

Słowa kluczowe

EN

silicon technology; oxidation; PECVD; RTO; gate oxide; ultrathin; layers

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 27--34
• Opis fizyczny: Bibliogr. 9 poz., tab., rys.

Twórcy

autor

Beck R.B.

autor

Jakubowski A.

autor

Łukasiak L.

autor

Korwin-Pawłowski M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology