High-temperature instability processes in SOI structures and MOSFETs

• Autorzy: Nazarov A.N. , Kilchytska V.I. , Vovk Ja.N. , Colinge J.P.
• Języki publikacji: EN

Abstrakty

EN

The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.

Słowa kluczowe

EN

SOI; MOSFET; high-temperature; instability; ZMR; SIMOX

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 18--26
• Opis fizyczny: Bibliogr. 26 poz., tab., rys.

Twórcy

autor

Nazarov A.N.

autor

Kilchytska V.I.

autor

Vovk Ja.N.

autor

Colinge J.P.

• Institute of Semiconductor Physics, NASU, Kyiv, Ukraine,