Reliability of deep submicron MOSFETs

• Autorzy: Balestra F.
• Języki publikacji: EN

Abstrakty

EN

In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of gate length and temperature is given. The main hot carrier effects and degradation are compared for bulk and SOI devices in a wide range of gate length, down to deep submicron. The worst case aging, defice lifetime and maximum drain bias that can be applied are addressed. The physical mechanisms and the emergence of new phenomena at the origin of the degradation are studied for advanced MOS transistors. The impact of the substrate bias is also outlined.

Słowa kluczowe

EN

bulk MOSFETs; SOI devices; deep submicron; transistors; reliability

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2001
• Tom: nr 1
• Strony: 12--17
• Opis fizyczny: Bibliogr. 13 poz., rys.

Twórcy

autor

Balestra F.

• LPCS (CNRS/INPG), ENSERG, France,