An impact of frequency on capacitances of partially-depleted SOI MOSFETs

• Autorzy: Tomaszewski D. , Łukasik L. , Zaręba A. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.

Słowa kluczowe

EN

SOI MOSFET; small-signal models; non-quasi-static analysis; admittances

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2000
• Tom: nr 3-4
• Strony: 67--71
• Opis fizyczny: Bibliogr. 8 poz., tab., rys.

Twórcy

autor

Tomaszewski D.

autor

Łukasik L.

autor

Zaręba A.

autor

Jakubowski A.

• Institute of Electron Technology, Warsaw, Poland