Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs

• Autorzy: Goffioul M. , Vanhoenacker D. , Raskin J.P.
• Języki publikacji: EN

Abstrakty

EN

Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process.

Słowa kluczowe

EN

microelectronics; microwave devices; SOI MOSFET

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2000
• Tom: nr 3-4
• Strony: 59--66
• Opis fizyczny: Bibliogr. 10 poz., rys.

Twórcy

autor

Goffioul M.

autor

Vanhoenacker D.

autor

Raskin J.P.

• Universiti catholique de Louvain, Louvain-la-Neuve, Belgium