CVD growth of high speed SiGe HBTs using SiH4

• Autorzy: Radamson H.H. , Grahn J. , Landgren G.
• Języki publikacji: EN

Abstrakty

EN

The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.

Słowa kluczowe

EN

SiGe; epitaxy; HBT; silane

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2000
• Tom: nr 3-4
• Strony: 10--14
• Opis fizyczny: Bibliogr. 20 poz., rys.

Twórcy

autor

Radamson H.H.

autor

Grahn J.

autor

Landgren G.

• Royal Institute of Technology, Sweden