Thin films deposited in barrier discharge under atmospheric pressure

• Autorzy: Rżanek-Boroch Z. , Lamenta A. , Górska A.
• Języki publikacji: EN

Abstrakty

EN

A laboratory scale plasma enhanced chemical vapor deposition (PE-CVD) process was developed for obtaining thin films from tetramethoxysilane (TMOS) in mixtures with He and O₂ on silicon single crystals using electric discharges, stabilized with a dielectric barrier under atmospheric pressure. The films deposited were of a good adhesion to the substrate and smooth. The rate of films deposition was measured and their composition was determined by infrared spectroscopy with Fourier transformation (FTIR) and X-ray photoelectron spectroscopy (XPS). The topography of the films was determined using atomic force microscope (AFM).

Słowa kluczowe

EN

thin film; tetramethoxysilane; silica; SiO2 layers

PL

cienkie warstwy; dwutlenek krzemu

• Wydawca: Centrum Materiałów Polimerowych i Węglowych PAN
• Czasopismo: Polish Journal of Applied Chemistry
• Rocznik: 2005
• Tom: Vol. 49, nr 1-2
• Strony: 49--51
• Opis fizyczny: Bibliogr. 13 poz., Rys. 11

Twórcy

autor

Rżanek-Boroch Z.

• Faculty of Chemistry, Warsaw University of Technology, ul Noakowskiego 3, 00-664 Warszawa

autor

Lamenta A.

• Faculty of Chemistry, Warsaw University of Technology, ul Noakowskiego 3, 00-664 Warszawa

autor

Górska A.

• Faculty of Chemistry, Warsaw University of Technology, ul Noakowskiego 3, 00-664 Warszawa

Bibliografia

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