Germanium oxide thin films fabricated by plasma-assisted chemical vapor deposition

• Autorzy: Gubiec K. , Uzupis A. , Tyczkowski J.
• Języki publikacji: EN

Abstrakty

EN

Amorphous hydrogenated germanium oxide films (a-GeXOY:H) fabricated by plasma-assisted chemical vapor deposition (PACVD) from a mixture of oxygen and tetramethylgermane in radio-frequency (13.56 MHz) glow discharge, were investigated. Measurements of electrical conductivity and internal photoemission were carried out. It has been found that the films are amorphous insulators (a-I) with the transport gap of 6.7 eV and the conductivity of the order of 10–14 S/m. To characterize the chemical structure of the films, Raman spectroscopy was used. The main structure of the GeO₄ type with low concentration of Ge–Ge and Ge–C bonds has been identified.

Słowa kluczowe

EN

electronic structure; germanium oxide; plasma deposition

PL

struktura elektronowa; tlenek germanowy; plazma

• Wydawca: Centrum Materiałów Polimerowych i Węglowych PAN
• Czasopismo: Polish Journal of Applied Chemistry
• Rocznik: 2005
• Tom: Vol. 49, nr 1-2
• Strony: 33--39
• Opis fizyczny: Bibliogr. 20 poz., rys. 4

Twórcy

autor

Gubiec K.

• Faculty of Process and Environmental Engineering, Technical University of Łódź, Wólczańska 213, 93-005 Łódź, Poland

autor

Uzupis A.

• Department of Physics, Lithuanian University of Agriculture, Universiteto 10, Akademija, LT-4324 Kaunas, Lithuania

autor

Tyczkowski J.

• Faculty of Process and Environmental Engineering, Technical University of Łódź, Wólczańska 213, 93-005 Łódź, Poland

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