Nanowires and nanotubes of BN, GaN and Si₃N₄

• Autorzy: Deepak F. L. , Gundiah G. , Govindaraj A. , Rao C. N. R.
• Języki publikacji: EN

Abstrakty

EN

Simple methods of synthesizing nanotubes and nanowires of boron nitride, gallium nitride and silicon nitride have been investigated. The nanotubes and nanowires have been examined by electron microscopy and other techniques. In the case of BN, activated carbon or multi-walled carbon nanotubes (MWNTs) was heated with boric acid in the presence of NH(3). With activated carbon, BN nanowires constitute the primary products, but good yields of BN nanotubes are obtained with MWNTs. Aligned BN nanotubes are obtained when aligned MWNTs are employed as the starting material suggesting the tern-plating role of the carbon nanotubes. Single crystal gallium nitride nanowires have been obtained by heating carbon nanotubes coated with gallium acetylacetonate in NHs vapor at 910 °C. Single-walled carbon nanotubes were used as templates to reduce the diameter of the GaN nanowires. The growth direction of the GaN nanowires is nearly perpendicular to the [100] planes and the nanowires exhibit satisfactory photoluminescence spectra. SisN4 nanowires have been synthesized by heating multi-walled carbon nanotubes with silica gel at 1360 °C in an atmosphere of NH(3).Si(3)N(4) nanotubes are formed occasionally when aligned multi-walled nanotubes are employed as templates.

Słowa kluczowe

EN

boron nitride; gallium nitride; silicon nitride; nanowires; nanotubes

PL

bor; gal; krzem; azotek; nanochemia

• Wydawca: Centrum Upowszechniania Nauki PAN
• Czasopismo: Bulletin of the Polish Academy of Sciences. Chemistry
• Rocznik: 2002
• Tom: Vol. 50, No.2
• Strony: 165--174
• Opis fizyczny: Bibliogr. 21 poz.

Twórcy

autor

Deepak F. L.

autor

Gundiah G.

autor

Govindaraj A.

autor

Rao C. N. R.

• Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry, Jawaharial Nehru Centre for Advanced Scientific Research, Jakkur P. O. Bangalore 560 064, India