Structural and electrical properties of thin diamond films grown by HF-CVD method

• Autorzy: Rozpłoch F. , Kulesza S. , Patyk J. , Bała W. , Borowski P.
• Konferencja: "New Carbon Materials" / sympozjum (1; 1999: Ustroń-Jaszowiec, Poland)
• Języki publikacji: EN

Abstrakty

EN

Structural and electrical properties of thin diamond films have been studied and discussed in terms of deposition conditions. Diamond films were produced by Hot-Filament CVD (HF-CVD) method modified by doping and electron bombardment of growing surface. Morphological changes were investigated by the scanning electron microscopy (SEM) method reproducing shape of diamond surface. Parameters characterising quality of deposited samples were estimated from Raman scattering measurements. Furthermore, analysis of X-ray scattering data based on Debye-Scherrer equation is described resulting in estimation of grain size and level of stresses of the CVD diamond films. Finally, I-V characteristics of investigated samples are plotted. They are discussed in terms of rectifying properties of such structures caused by distortions of the lattice (Martin's model).

Słowa kluczowe

EN

diamond; thin film; structural properties; electrical properties; Hot-Filament CVD method

PL

diament; cienkie warstwy; właściwości elektryczne; struktura

• Wydawca: Centrum Materiałów Polimerowych i Węglowych PAN
• Czasopismo: Polish Journal of Applied Chemistry
• Rocznik: 2000
• Tom: Vol. 44, nr 2-3
• Strony: 81--93
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Rozpłoch F.

• Division of Radiospectroscopy and Physics of Carbon, Institute of Physics Nicolas Copernicus University, ul. Grudziądzka 5/7,87-100 Toruń

autor

Kulesza S.

• Division of Radiospectroscopy and Physics of Carbon, Institute of Physics Nicolas Copernicus University, ul. Grudziądzka 5/7,87-100 Toruń

autor

Patyk J.

• Division of Radiospectroscopy and Physics of Carbon, Institute of Physics Nicolas Copernicus University, ul. Grudziądzka 5/7,87-100 Toruń

autor

Bała W.

• Division of Microelectronics, Institute of Physics, Nicolas Copernicus University, ul. Grudziądzka 5/7,87-100 Toruń

autor

Borowski P.

• Division of Microelectronics, Institute of Physics, Nicolas Copernicus University, ul. Grudziądzka 5/7,87-100 Toruń

Bibliografia

• [1] K. SPEAR and J.DISMUKES, Synthetic diamond- Emerging CVD science and technology New York 1994.
• [2] E. FITZER and F. ROZPŁOCH, HT-HP, 20,449, (1988).
• [3] R.M. MARTIN, Phys. Rev. B, vol. 1 (1970), No 10, p. 4004.