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Audio frequency glow discharge - new prospects for deposition of thin films of plasma glasses from organic precursors

Autorzy
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A new type of reactor for plasma chemical vapour deposition from organic precursors, activated by audio frequency, is presented. It was found that ion bombardment process and plasma chemical processes are completely separated in the system and they can be idenpendently controlled. This feature makes it possible to produce two types of twin films, namely amorphous insulators (a-I) and amorphous semiconductors (a-S), using the same original compound and a continuous deposition process. The type of deposited material can be selected by only small changes of a coupling capacitance in the system. It seems that the reactor offers new possibilities for thin film technology consisting in preparation of novel class of layer structures formed from twin films of a-I and a-S.
Rocznik
Strony
135--141
Opis fizyczny
Bibliogr. 21 poz., rys.
Twórcy
  • Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, 90-363 Łódź, Poland
Bibliografia
  • [1] H. YASUDA, Plasma Polymerization, Academic Press, Orlando 1985.
  • [2] J. TYCZKOWSKI, Cienkie warstwy polimerów plazmowych (in Polish), WNT, Warsaw 1990.
  • [3] Plasma Deposition, Treatment, and Etching of Polymers, Ed. R. d'Agostino, Academic Press, Boston 1990.
  • [4] H. BIEDERMAN, Y. OSADA, Plasma Polymerization Processes, Elsevier, Amsterdam 1992.
  • [5] W. LUFT, Y.S. TSUO, Hydrogenerated Amorphous Silicon Alloy Deposition Processes, Marcel Deker, New York 1993.
  • [6] Handbook of Plasma Processing Technology, Eds. S.M. Rossnagel, J.J. Cuomo, W.D. Westwood, Noyes Publ., Park Ridge 1990.
  • [7] T. OHTE, M. SUGAWARA, Mat. Sci. Eng., A139, 24 (1991).
  • [8] Y. CATHERINE, P. COUDERC, Thin Solid Films, 144, 265 (1986).
  • [9] B.G. BUDAGUAN, A.A. SHERCHENKOV, V.D. CHERNOMORDIC, A.V. BIRIUKOV, L. LJUNGBERG, Proc. J, Non-Cryst. Solids 227/230, 1123 (1998).
  • [10] J. TYCZKOWSKI, P. KAZIMIERSKI, W. FALLMANN, F. OLCAYTUG, Patent PL-169688B1 (1996).
  • [11] J. TYCZKOWSKI, H. SZYMANOWSKI, R. MAZURCZYK, Surf. Coat. Technol., 98, 1369 (1997).
  • [12] J. TYCZKOWSKI, P. KAZIMIERSKI, E. ODROBINA, Surf. Coat. Technol., 60, 609 (1993).
  • [13] J. TYCZKOWSKI, P. KAZIMIERSKI, H. SZYMANOWSKI, Thin Solid Films, 241, 291 (1994).
  • [14] J. TYCZKOWSKI, B. PIETRZYK, H. SZYMANOWSKI, J. Chem. Vap. Dep., 4, 261 (1996).
  • [15] J. TYCZKOWSKI, B. PIETRZYK, Y. HATANAKA, Y. NAKANISHI, Appl. Surf. Sci., 113/114, 534 (1997).
  • [16] J. TYCZKOWSKI, P. KAZIMIERSKI, J. Phys. D: Appl. Phys., 27, 179 (1994).
  • [17] H. OVERHOF, P. THOMAS, Electronic Transport in Hydrogenated Amorphous Semiconductors, Springer-Verlag, Berlin 1989, Chap. 2.
  • [18] A. GRILL, Cold Plasma in Materials Fabrication, IEEE Press, New York 1994.
  • [19] K. ANDO, M. AOZASA, Thin Solid Films, 23, S45 (1974).
  • [20] K. ANDO, M. AOZASA, R.G. PYON, Appl. Phys. Lett., 44, 413 (1984).
  • [21] R. d'AGOSTINO, R. LAMENDOLA, P. FAVIA, A. GIQUEL, J. Vac. Sci. Technol., A12, 308 (1994).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPP1-0006-0016
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