Improved Electrical Measurement Method for Junction Temperature of Light Emitting Diodes

• Autorzy: Shen H. , Han K. , Liu M. , Fan S.

Warianty tytułu

PL

Ulepszona metoda pomiaru temperatury złącza diody LED

• Języki publikacji: EN

Abstrakty

EN

The electrical test method (ETM) is used to measure the junction temperature Tj of high brightness LEDs. NI 5922 digitizer and Keithley S2400 source meter were used to build the measurement system. Various measurement currents were used under 1MHz sampling rate. Results of different measurement currents are found to be the same under the same sampling rate and measurement error can be found under low sampling rates. When sampling rate is down to 0.2kHz, measurement error is up to 13.7%.

PL

Zaproponowano metodę pomiaru temperatury złącza diody LED. Określono błąd metody dla różnych częstotliwości próbkowania.

Słowa kluczowe

EN

LED; junction temperature; electrical measurement; sampling rate

PL

LED; temperatura złącza

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2012
• Tom: R. 88, nr 3b
• Strony: 180--184
• Opis fizyczny: Bibliogr. 15 poz., schem., wykr.

Twórcy

autor

Shen H.

autor

Han K.

autor

Liu M.

autor

Fan S.

• Fudan University, No. 220 Handan Road, Shanghai 200433, China,

Bibliografia

• [1] Haitz, R., Kish, F., Tsao, J. and Nelson, J., The Case for a National Research Program on Semiconductor Lighting, Forum. OIDA, (1999)
• [2] CREE XLamp XP-G LEDs Data Sheet (2009)
• [3] Shen, HP., Zhou, XL., Zhang, WL. and Liu, MQ., Dependence of Reliability of GaN LEDs on Their Junction Temperatures and Ideal Factors, IEEE ACP 2010, Shanghai, (2010)
• [4] Woong, JH., Tae, HL. and Lan, K., Determination of Junction Temperature and Thermal Resistance, Phys. Stat. Sol.(c)1 (2004), No.10, 2429-2432
• [5] Jeong, Park., Thermal and Electrical Studies of GaN-based Heterojunction Field Effect Transistors and Light Emitting Diodes, Dissertation, UMI Number, 3149682 (2004)
• [6] Jordan, R., Oppermann, H., May, D. and Michel, B., Quantification of Thermal Parameters in High Power LED Packages, China SSL 2010, 208-212
• [7] Gu, YM. and Narendran, N., A Non-contact Method for Determining Junction Temperature of Phosphor-Converted White LEDs, Third International Conference on Solid State Lighting, Proceedings of SPIE 5187 (2004): 107-114
• [8] Narendran, N., Gu, YM. and Hosseinzadeh, R., Estimating Junction Temperature of High-flux White LEDs, The International Society for Optical Engineering, San Jose, CA, United States, Proceedings of SPIE 5366 (2004): 158-160
• [9] Hong, E. and Narendran, N., A Method for Projecting Useful Life of LED Lighting Systems, Third International Conference on Solid State Lighting, Proceedings of SPIE 5187 (2003): 93-99
• [10] Zhang, JC., Zhu, YH., Egawa, T., Sumiya, S., Miyoshi, M. and Tanaka, M., Influence of Pulse Width on Electroluminescence and Junction Temperature of AlInGaN Deep Ultraviolet Light Emitting Diodes, Applied Physics Letters, 92 (2008), No.19, 191917(1) - (3)
• [11] Cho, J., Sone, C., Park, Y. and Yoon, E., Measuring the unction Temperature of III-nitride Light Emitting Diodes Using Electro-luminescence Shift, Phys. Stat. Sol (2005), 1869-1873
• [12] EIA JEDEC Standard JESD51-1 Intergrated Circuits Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device) (1995)
• [13] Tsai, MY., Chen, CH. and Kang, CS., Thermal Analyses And Measurements Of Low-Cost COP Package For High-Power LED, Electronic Components and Technology Conference (2008), 1812-1818
• [14] Szekely, V., A New Evaluation Method of Thermal Transient Measurement Results, Microelectronics Journal, 28 (1997), 277-292
• [15] L.Weinberg, Network Analysis and Synthesis, McGraw-Hill, New York, (1962)