Microstructure Transition in Electroplated CU Films at Room Temperature - I. Electrical Resistivity and XRD Analysis

• Autorzy: Freundlich P.
• Konferencja: Metody oceny struktury oraz własności materiałów i wyrobów / sympozjum (XVIII ; 25-27.11.2003 ; Svratka, Czechy)
• Języki publikacji: CS

Abstrakty

EN

A suite of systematic experimental studies on electroplated copper films was carried out by a systematic change of plating current density and additive concentration in the plating electrolyte. The films were characterized by employing resistivity measurement and x-ray diffraction. In the indicated range, the annealing time decreased with increasing plating current density, and showed a minimum as a function of additive concentration. Electroplated copper films had strong (111) texture which further increased during self-annealing.

Słowa kluczowe

EN

XRD analysis; microstructure transition

• Wydawca: Oficyna Wydawnicza Politechniki Opolskiej
• Czasopismo: Zeszyty Naukowe. Mechanika / Politechnika Opolska
• Rocznik: 2003
• Tom: z. 76
• Strony: 75--82
• Opis fizyczny: Bibliogr. 14 poz., wykr.

Twórcy

autor

Freundlich P.

• VŠB Technical University of Ostrava

Bibliografia

• [1] MORAND, Y.: "Copper metallization for advanced IC: requirements and technological solutions", Microelectronic Engineering 50 (2000), 1-4, pp. 391-401.
• [2] Hu, C.-K., HARPER, J.M.E.: "Copper interconnections and reliability", Materials Chemistry and Physics 52 (1998), pp. 5-16.
• [3] PRICE, D.T., GUTMANN, R.J., MURARKA, S.P.:"Damascene copper interconnects with polymer ILDs", Thin Solid Films 308-309 (1997), pp. 523-528.
• [4] McGRATH, DYLAN: "Novellus licenses IBM copper technology", Electronic News 44 Issue 2228,07/20/98, p.6.
• [5] MIKKOLA, R.D., JIANG, Q.-T., CARPENTER, B.:"Copper electroplating for advanced interconnect technology", Plating and Surface Finishing 87 (2000), 3, pp. 81-85.
• [6] LINGK, C. and GROSS, M.E.: "Recrystallization kinetics of electroplated Cu in damascene trenches at room temperature", Journal of Applied Physics 84 (1998), 10, pp.5547-5553.
• [7] LAGRANGE, S., B RONGERSMA, S.H., JUDELEWICZ, M., SAERENS, A., VERVOORT, I., RICHARD, E., PALMANS, R., MAEX, K.: "Self-annealing characterization of electroplated copper films", Microelectronic Engineering 50 (2000), 1-4, pp. 449-457.
• [8] KELLY, J.J., TIAN, CH., WEST, A.C.: "Leveling and microstructural effects of additives for copper electrodeposition", Journal of TheElectrochemical Society 146 (1999), 7, pp. 2540-2545.
• [9] Joint Committee for Powder Diffraction Standards, Powder Diffraction File #4-836.
• [10] TOMOV, STOYCHEV, VITANOVA, Journal of Applied Electrochemistry 15 (1985), pp. 887-894.
• [11] GUINIER, A.: X-ray Diffraction, W.H.Freeman and Comp., San Francisco 1963.
• [12] UENO, K., RITZDORF, T., GRACE, S.: "Seed layer dependence of room-temperature recrystallization in electroplated copper films", Journal of Applied Physics 86 (1999), 9, pp. 4930-4935.
• [13] LINGK, C, GROSS, M.E., BROWN, L.: "Texture development of blanket electroplated copper films", Journal of Applied Physics 87 (2000), 5, pp. 2232-2236.
• [13] FREUNDLICH, P.: "Microsturcture Transition In Electroplated Cu Films At Room Temperature - II. TEM and EBSD Observations", Zeszyty Naukowe Politechniki Opolskiej, this issue.