Sterowniki bramkowe dla tranzystorów z węglika krzemu (SiC) - przegląd rozwiązań

Rąbkowski, J.; Zdanowski, M.; Barlik, R.

Artykuł - szczegóły

Tytuł artykułu

Sterowniki bramkowe dla tranzystorów z węglika krzemu (SiC) - przegląd rozwiązań

Autorzy

Rąbkowski J. , Zdanowski M. , Barlik R.

Wybrane pełne teksty z tego czasopisma

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Identyfikatory

Warianty tytułu

Gate drive units for silicon carbide power transistors – solutions overview

Języki publikacji

Abstrakty

Artykuł przedstawia przegląd rozwiązań sterowników bramkowych tranzystorów mocy z węglika krzemu. Omówiono kolejno przypadki tranzystorów złączowych (JFET): normalnie załączonych a także normalnie wyłączonych oraz sterowniki prądu bazy dla tranzystorów bipolarnych (BJT). Przedstawiono także wyniki badań eksperymentalnych – przebiegi prądów i napięć zarejestrowane w trakcie testów dwupulsowych, obrazujące procesy łączeniowe dla każdego z omawianych tranzystorów.

The paper presents an overview of the gate drive units for Silicon Carbide power transistors. Solutions for two types of Junction Field Effect Transistors: normally-on and normally-off as well as base drive units for bipolar transistors (BJTs) are described. Experimental results – waveforms of the currents and voltages recorded during double-pulse tests are presented in order to illustrate switching behavior of discussed transistors.

Słowa kluczowe

węglik krzemu tranzystor JFET tranzystor BJT sterowniki bramkowe

silicon carbide JFET BJT gate drive units

Wydawca

Wydawnictwo SIGMA-NOT

Czasopismo

Przegląd Elektrotechniczny

Rocznik

2012

Tom

R. 88, nr 4b

Strony

187--192

Opis fizyczny

Bibliogr. 70 poz., rys., tab.

Twórcy

autor

Rąbkowski J.

autor

Zdanowski M.

autor

Barlik R.

Politechnika Warszawska, Instytut Sterowania i Elektroniki Przemysłowej, ul. Koszykowa 75, 00-662 Warszawa, jacek.rabkowski@isep.pw.edu.pl

Bibliografia

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Bibliografia

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