Hybrid IGBT-IGCT Switch

• Autorzy: Blinov A. , Vinnikov D. , Ivakhno V. , Zamaruev V.

Warianty tytułu

PL

Łącznik hybrydowy typu IGBT-IGCT

• Języki publikacji: EN

Abstrakty

EN

This paper presents an analysis of a hybrid high-voltage switch based on the parallel connection of IGBT and IGCT. The proposed configuration allows combining the advantages of both semiconductors, resulting in substantially reduced power losses. Such energy efficient switches could be used in high-power systems where decreased cooling system requirements are a major concern. The operation principle of the switch is described and simulated and power dissipation is estimated at different operation conditions.

PL

Artykuł prezentuje analizę hybrydowego łącznika wysokonapięciowego bazującego na równoległym połączeniu tranzystora IGBT i tranzystora IGCT. Proponowana konfiguracja pozwala na uzyskanie zalet dwóch półprzewodników, w rezultacie czego otrzymano znaczne zmniejszenie strat mocy. Takie energooszczędne łączniki, mogą być używane w systemach dużej mocy, gdzie zmniejszenie urządzeń systemu chłodzenia jest głównym problemem. Opisano i zasymulowano działanie łączników, oraz oszacowano rozpraszanie energii dla różnych warunków pracy.

Słowa kluczowe

EN

insulated gate bipolar transistors; industrial power systems

PL

tranzystor bipolarny; tyrystor z izolowaną bramką; przemysłowe systemy energetyczne

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2012
• Tom: R. 88, nr 1a
• Strony: 12--15
• Opis fizyczny: Bibliogr. 17 poz., rys., tab., wykr.

Twórcy

autor

Blinov A.

autor

Vinnikov D.

autor

Ivakhno V.

autor

Zamaruev V.

• Tallinn University of Technology, Department of Electrical Drives and Power Electronics, Ehitajate tee 5, Tallinn, 19086, Estonia,

Bibliografia

• [1] Jaecklin, A.A.; "Advanced power bipolar devices," Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998 , vol., no., pp.61-66, 27-29 Sep 1998
• [2] Hof fmann, K.F. ; Karst, J.P.; "High frequency power switch - improved performance by MOSFETs and IGBTs connected in parallel," Power Electronics and Applications, 2005 European Conference, pp.11
• [3] Kaerst, J.P.; Hoffmann, K.F. "High speed complementary drive of a hybrid MOSFET and IGBT power switch," Power Electronics and Applications, 2005 European Conference, pp.9
• [4] Goncharov, J . ; Ivakhno, V.; Nikulochkin, S.; Kipenski, A.; Pedan, E.; "Thyritor-Transistor Switch for Traction Converters Supplying Permanent Current Morors," Implementation of converters in electro energetics, traction and electro technological applications, proceedings of international scientific conference pp. 34-36 1984. /in Russian/
• [5] Panasenko, M.; Panasenko, N.; Hvorost, V.; "Energy-Efficient High-Current High-Voltage Switches and Phase Modules Based on Them", Electro technics and Electro mechanics, pp.24-29 no.5, 2007 /in Ukrainian/
• [6] Kozachok, V.; Nikulin, V; Panasenko, N; "Two- Quadrant Power Switches for Reserve Traction PWMConverters," The collection of proceedings of the Ukrainian state academy of railway traction. pp.159-168, 2009 /in Ukrainian/
• [7] Datasheet Insulated Gate Bi-Polar Transistor Type T0900EA45A, Westcode; 20 Sep. 2006
• [8] Datasheet Asymmetric Integrated Gate-Commutated Thyristor 5SHY35L4512, ABB; 3 May 2008
• [9] Sokol, E.; et al., "Flexible High-Frequency Square-Wave Energy Transmission Systems," Problems of Present-Day Electronics-2010. ХІ International Scientific-Technical Conference, PPE – 2010. June 1-3, 2010, Kiev, Ukraine /in Russian/
• [10] Setz, T.; Lüscher, M.; "Applying IGCTs, " ABB Switzerland Ltd Application note no. 5SYA2032-03, Oct 2007
• [11] Bernet, S.; "Recent developments of high power converters for industry and traction applications," Power Electronics, IEEE Transactions, vol.15, no.6, pp.1102-11 17, Nov 2000
• [12] Motto, E.; Yamamoto, M.; "New High Power Semiconductors: High Voltage IGBTs and GCTs," Powerex Inc., Youngwood, Pennsylvania, USA; Mitsubishi Electric, Power Device Division, Fukuoka, Japan
• [13] Alvarez, R.; Bernet, S.; Lindenmueller, L.; Filsecker, F.; "Characterization of a new 4.5 kV press pack SPT+ IGBT in Voltage Source Converters with clamp circuit," Industrial Technology (ICIT), 2010 IEEE International Conference, pp.702-709, 14-17 March 2010
• [14] Bruckner, T.; Bernet, S.; "Investigation of a high power threelevel quasi-resonant DC-link voltage source inverter," Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE, vol.2, pp.1015-1022 vol.2, 2000
• [15] Motto, K.; Zhang, B.; Huang, A.Q.; "Characterization of IGCT under zero-current-transition condition" Industry Applications Conference, 2001. Thirty- Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE , vol.3, pp.1490-1496 vol.3, 30 Sep-4 Oct 2001
• [16] Hermann, R.; Bernet, S.; Yongsug Suh; Steimer, P.K.; "Parallel Connection of Integrated Gate Commutated Thyristors (IGCTs) and Diodes," Power Electronics, IEEE Transactions, vol.24, no.9, pp.2159-2170, Sept. 2009
• [17] Wang, X.; Caiafa, A.; Hudgins, J.; Santi, E.; "Temperature effects on IGCT performance," Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record, vol.2, pp. 1006- 1011 vol.2, 12-16 Oct. 2003