Comparative investigation of SiC and Si power electronic devices operating at high switching frequency

• Autorzy: Zymmer K. , Mazurek P.
• Konferencja: Konferencja “Integrated Optics – Sensor, Sensing and Methods” (IOS 2011) Szczyrk, luty 2011
• Języki publikacji: EN

Abstrakty

EN

The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.

Słowa kluczowe

EN

semiconductor devices; silicon carbide; high frequency converters

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2011
• Tom: Vol. 59, nr 4
• Strony: 555--559
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Zymmer K.

autor

Mazurek P.

• Electrotechnical Institute, 28 Pożaryskiego St., 04-703 Warszawa, Poland,

Bibliografia

• [1] A. Michalski and K. Zymmer, “Investigation of properties of power electronic devices made of silicon carbide (SiC) under conditions of current commutation with high frequency”, Works of Electrotechnic Institute 243, CD-ROM (2009), (in Polish).
• [2] R. Barlik, J. Rąbkowski, and M. Nowak, “Power electronic systems with silicone carbide devices – present state and perspectives”, VI Nat. Conf. Electronics 1, CD-ROM (2007).
• [3] J.M. Hancock, “Novel SiC diode solves PFC challenges”, Materials of the Firm Infineon Technologies. Power Electronics Technology 1, www.powerelectronics.com (2006).
• [4] S. Jr Hodge, “SiC Schottky diodes in power factor correction”, Power Electronics Technology 1, www.powerelectronics.com (2004).
• [5] A. Konczakowska, A. Szewczyk, J. Kraśniewski, and M. Oleksy, “Measurements of parameters and static, dynamic, noise and thermal characteristics of SiC devices”, VI Nat. Conf. Electronics 1, CD-ROM (2007).
• [6] R. Richmond, “ Hard-switched silicon IGBTs? Cut switching losses in half with silicon carbide Schottky diodes”, Materials CREE 1, CD-ROM (2010).
• [7] W. Janke, A. Hapka, and M. Oleksy, “DC characteristics of the Schottky diodes”, Bull. Pol. Ac.: Tech. 59 (2), 183–188 (2011).
• [8] P. Ning, R. Lai, D. Huff, F.Wang, K.D.T. Ngo, V.D. Immanuel, and K.J. Karimi, “SiC wireband multichip phase – leg module packaging design and testing for harsh environment”, IEEE Trans. on Power Electronics 25 (1), 16–23 (2010).
• [9] J. Richmond, S.H. Ryu, M. Das, S. Krishnaswami, S. Hodge, A. Agarval, and J. Palmour, “An overview of Cree silicon carbide power devices”, Power Electronics in Transportation 1, CD-ROM (2004).
• [10] Q. Zhang, R. Callanan, M.K. Das, S.H. Ryu, A.K. Agarwal, and J.W. Palmour, “SiC Power devices for microgrids”, IEEE Trans. on Power Electronics 25 (12), 2889-2896 (2010).
• [11] R. Singh and J. Richmond, “SiC power Schottky diodes in power-factor correction circuits”, Materials CREE, www.cree.com/power (2010).
• [12] LED chips, LED Components, Lighting Products, Power-Switching and Wireless Communications Devices, www.cree.com (2011).