Modelling of the Interface Evolution During Si Layer Growth on a Partially Masked Substrate

• Autorzy: Gulkowski S. , Olchowik J. , Cieślak K. , Moskvin P.
• Języki publikacji: EN

Abstrakty

EN

High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.

Słowa kluczowe

EN

epitaxial lateral overgrowth; liquid-phase epitaxial growth; computer simulations

• Wydawca: Politechnika Gdańska
• Czasopismo: TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
• Rocznik: 2011
• Tom: Vol. 15, No 1
• Strony: 91--98
• Opis fizyczny: Bibliogr. 7 poz., rys.

Twórcy

autor

Gulkowski S.

autor

Olchowik J.

autor

Cieślak K.

autor

Moskvin P.

• Institute of Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland,

Bibliografia

• [1] Liu Y C, Zytkiewicz Z R and Dost S 2005 J. Crystal Growth 275 953
• [2] Yan Z, Naritsuka S and Nishinaga T 2000 J. Crystal Growth 209 l
• [3] Dost S and Lent B 2007 Single Crystal Growth of Semiconductors from Metallic Solutions, Elsevier
• [4] Udaykumar H S, Mittal R and Shyy W 1999 J. Comp. Phys. 153 534
• [5] Kimura M, Djilali N and Dost S 1994 J. Crystal Growth 143 334
• [6] Capper P and Mauk M 2007 Liąuid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, John Willey & Sons
• [7] Durbin T L 2005 Modelling Dissolution in Aluminium Alloys, PhD Thesis. Georgia Institute of Technology