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We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs. At 1.1 W absorbed power and 3% transmission output coupler, the laser delivers 150 mW for pulse duration of 110 fs, what corresponds to an efficiency of 14%. It was achieved using semiconductor saturable absorber mirror (SESAM) grown by molecular beam epitaxy. SESAM contains a distributed Bragg reflector (DBR) completed by single quantum well (SQW) playing role of an absorbing layer. The absorbers were crystallized in accordance with the predicted structure parameters under optimised growth conditions. The resonant-like type of structures ensured relatively high enhancement factor due to antireflective properties of SiO2 capping material and a wavelength independence of a group delay dispersion. The optimisation of the growth conditions of both an absorbing layer and DBR structure were widely carried out. Optical reflectance and high resolution X-ray diffraction have been used for characterization and verification of DBR structures. It results in reduction of the nonsaturable absorption in SESAM and self-starting mode-locking of the ultrashort pulses.
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Tom
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477--483
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Bibliogr. 12 poz., rys.
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autor
autor
autor
autor
autor
- Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warszawa, Poland, ajasik@gazeta.pl
Bibliografia
- [1] U. Keller, D.A.B. Miller, G.D. Boyd, T.H. Chiu, J.F. Ferguson, and M.T. Asom, “Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber”, Opt. Lett. 17, 505–507 (1992).
- [2] D.C. Look, “Molecular beam epitaxial GaAs grown at low temperature”, Thin Solid Films 231, 61–73 (1993).
- [3] T.E. Sale, Vertical Cavity Surface Emitting Lasers, Research Studies Press Ltd., Somerset, 1995.
- [4] M.A. Aframowitz, “Refractive Index of Ga1−xAlxAs”, Solid State Commun. 15, 59–63 (1974).
- [5] Y. Kokubo and I. Ohta, “Refractive index as a function of the photon energy for AlGaAs between 1.2eV and 1.8eV”, J. Appl. Phys. 81 (4), 2042–2045 (1997).
- [6] G.B. Stringfellow, Organometallic Vapour Phase Epitaxy: Theory and Practice, Academic Press, Utah, 1989.
- [7] A. Mazuelas, R. Hey, M. Wassermeier, and H.T. Grahn, “Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors”, J. Cryst. Growth 383, 175–176 (1997).
- [8] A. Jasik, J. Muszalski, J. Gaca, M. Wójcik, M. Kosmala, and K. Piersciński, “SESAM – nonlinear semiconductor absorber – characterization and technology of production”, 3rd Nanotechnology Conf. 1, CD-ROM (2009), (in Polish).
- [9] N.V. Kuleshov, A.A. Lagatsky, A.V. Podlipensky, V.P. Mikhailov, and G. Hubert, “Pulsed laser operation of Y bdope d KY(WO4)2 and KGd(WO4)2”, Opt. Lett. 22, 1317–1319 (1997).
- [10] G. M´etrat, M. Boudeulle, N. Muhlstein, A. Brenier, and G. Boulon, “Nucleation, morphology and spectroscopic properties of Yb3+-doped KY(WO4)2 crystals grown by the top nucleated floating crystal method”, J. Cryst. Growth 197, 883–888 (1999).
- [11] P. Klopp, V. Petrov, U. Griebner, and G. Erbert, “Passively mode-locked Yb-KYW laser pumped by a tapered diode laser”, Optics Express 10 (2), 108–111 (2002).
- [12] G. Paunescu, J. Hein, and R. Sauerbrey, “100-fs diode-pumped Yb:KGW mode-locked laser“, Appl. Phys. B 79, 555–557 (2004).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPG8-0039-0014