GaAs/AlGaAs (~9.4 žm) quantum cascade lasers operating at 260 K

• Autorzy: Bugajski M. , Kosiel K. , Szerling A. , Kubacka-Traczyk J. , Sankowska I. , Karbownik P. , Trajnerowicz A. , Pruszy E. , Pierciński K. , Pierścińska D.
• Języki publikacji: EN

Abstrakty

EN

The fabrication of Quantum Cascade Lasers (QCLs) emitting at 9.4 um is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded in 77 K were over 1 W, and the slope efficiency 0.5–0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al0.45Ga0.55As heterostructure, with 3QW anticrossed-diagonal design originally proposed by Page et al. [1]. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si3N4 for electrical insulation. The QCL structures have been grown by Molecular Beam Epitaxy (MBE), with Riber Compact 21T reactor. The stringent requirements – placed particularly on the epitaxial technology – and the influence of technological conditions on the device structure properties are presented and discussed in depth.

Słowa kluczowe

EN

quantum cascade laser; pulsed mode

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2010
• Tom: Vol. 58, nr 4
• Strony: 471--476
• Opis fizyczny: Bibliogr. 10 poz., rys.

Twórcy

autor

Bugajski M.

autor

Kosiel K.

autor

Szerling A.

autor

Kubacka-Traczyk J.

autor

Sankowska I.

autor

Karbownik P.

autor

Trajnerowicz A.

autor

Pruszy E.

autor

Pierciński K.

autor

Pierścińska D.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warszawa, Poland,

Bibliografia

• [1] H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori, “300 K operation of GaAs based quantum-cascade laser at 9 μm”, Appl. Phys. Lett. 78, 3529–3531 (2001).
• [2] C. Sirtori, “GaAs quantum cascade lasers: fundamentals and performance”, EDP Sciences 7, 1–20 (2002).
• [3] C. Gmachl, F. Capasso, D.L. Sivco, and A.Y. Cho, “Recent progress in quantum cascade lasers and applications”, Rep. Prog. Phys. 64, 1533–1601 (2001).
• [4] C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, and U. Oesterle, “GaAs/AlGaAs quantum cascade lasers”, Appl. Phys. Lett. 73, 3486–3488 (1998).
• [5] P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics, Willey, Chichester, 2005.
• [6] K. Kosiel, J. Kubacka-Traczyk, P. Karbownik, A. Szerling, J. Muszalski, M. Bugajski, P. Romanowski, J.Gaca, and M. Wójcik, “Molecular beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures”, Microelectronics J. 40, 565–569 (2008).
• [7] http://www.nextnano.de, 2009.
• [8] K. Kosiel, M. Bugajski, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, J. Muszalski, A. Łaszcz, P. Romanowski, M. Wasiak, W. Nakwaski, I. Makarowa, and P. Perlin, “77 K operation of AlGaAs/GaAs quantum cascade laser at 9 μm”, Photonics Letters of Poland 1, 16–18 (2009).
• [9] S. Hofling, V. D. Jovanovic, D. Indjin, J.P. Reithmaier, A. Forchel, Z. Ikonic, N. Vukmirovic, and P. Harrison, “Dependence of saturation effects on electron confinement and injector doping in GaAs/Al0.45Ga0.55As quantum-cascade lasers”, Appl. Phys. Lett. 88, 251109–251111 (2006).
• [10] A. Szerling, P. Karbownik, E. Pruszyńska-Karbownik, K. Kosiel, M. Bugajski, S.Adhi, T. Ochalski, and G. Huyet, “Electrical and optical characterisation of ( 9.4 μm) GaAsbased quantum cascade lasers”, IEEE Proc. TERA-MIR 1, 71–72 (2009).