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Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CHx) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current–voltage characteristics have been investigated as a function of temperature in the range 200C-70°C.The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.
Słowa kluczowe
Rocznik
Strony
4--10
Opis fizyczny
Bibliogr. 23 poz., rys., tab.
Twórcy
autor
autor
autor
autor
  • University, Bp 119, Tlemcen, ALGERIA
Bibliografia
  • 1. Chursanova M.V., Germash L.P., Yukhymchuk V.O., Dzhagan V.M., Khodasevich I.A., Cojoc D., Applied Surface Science, 256 (2010), 3369-3373.
  • 2. Vitanov P., Goranova E., Stavrov V., Ivanov P., Singh P.K., Solar Energy Materials and Solar Cells, 93 (2009), 297-300.
  • 3. Kanungo J., Saha H., Basu S., Sensors and Actuators B: Chemical, 140 (2009), 65-72.
  • 4. Müller G, Friedberger A., Knese K., Handbook of Silicon Based MEMS Materials & Technologies (First edition), 2010, 409-431.
  • 5. Bazrafkan I, Dariani R.S., Physica B: Condensed Matter, 404, 2009, 1638-1642.
  • 6. Yuan Ming Huang, Fu-fang Zhou, Bao-gai Zhai, Lan-li Chen, Solid State Ionics, 179 (2008), 1194-1197.
  • 7. Baranauskas V, Peterlevitz A.C., Chang D.C., Durrant S.F., Applied Surface Science, 185 (2001), 108-113.
  • 8. Chursanova M.V., Germash L.P., Yukhymchuk V.O., Dzhagan V.M., Khodasevich I.A., Cojoc D., Applied Surface Science, 256 (2010), 3369-3373.
  • 9. Gabouze N., Benzekkour N., Mahmoudi B., Belhousse S., Cheraga H., Ghellai N., Applied Surface Science 254 (2008), 3648–3652.
  • 10. H. Cheraga, S. Belhousse, N. Gabouze. Applied Surface Science 238 (2004) 495–500.
  • 11. Gabouze N, Belhousse S, Cheraga H, Ghellai N, Ouadah Y, Belkasem Y, Keffous A. Vacuum 80 (2006), 986-989.
  • 12. Zito F., Aquilino F., Fragomeni L., Merenda M., Della Corten F., Sensors and Actuators A: Physical, 158 (2010), 169-175.
  • 13. Il Young Han, Sung Jin Kim., Sensors and Actuators A: Physical, 141 (2008), 52-58.
  • 14. Keränen K., Mäkinen J-T, Korhonen P., Juntunen E., Heikkinen V., Mäkelä J., Sensors and Actuators A: Physical, 158 (2010), 161-167.
  • 15. Nanosilicon, 2008, 149-175 James L. Gole, Stephen E. Lewis
  • 16. Handbook of Silicon Based MEMS Materials & Technologies (First edition), 2010, Pages 409-431. Gerhard Müller, Alois Friedberger, Kathrin Knese.
  • 17. Ouchabane M, Aoucher M., Sekkal A., Henda K., Lahmar H., Proceeding of the 16th International Symposium on Plasma Chemistry, Taormina, Italy, 2003, p. 410.
  • 18. Ouchabane M., Tadjine R., Lahmar H., Zekara M., Henda K., Kessi O., Proceeding of the 14th international Symposium on Plasma Chemistry, vol. IV, Prague, Czech Republic, 1999, p. 1709.
  • 19. Tucci M., La Ferrara V., Della Noce M., Massera E., Quercia L., Non-Cryst J., Solids 338–340 (2004), 776.
  • 20. Mulloni V. Gaburro Z., Pavesi L. Porous silicon microactivities as optical chemical sensor. Proceeding of Porous Semiconductors-Sciences and Technology, PSST-2, Madrid, Spain, 12-17 March, 2000, 101.
  • 21. Jalkanen T., Tuura J., Mäkilä M, SalonenJ., Sensors and Actuators B: Chemical, In Press, Corrected Proof, Available online 9 March 2010.
  • 22. Ait Hamouda K., Gabouze N., Hadjersi T., Benrekaa N., Outemzabet R., Cheraga H., Beldjilali K., Mahmoudi B.R., Sol. Energy Mater. Sol. Cells 76 (2003) 535.
  • 23. Adamyan Z., Adamian V., Aroutiounian. Physica E, 38, (2007), 164-167 A.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPG8-0028-0014
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