Surface smoothness improvement of HgCdTe layers grown by MOCVD

• Autorzy: Madejczyk P. , Piotrowski A. , Kłos K. , Gawron W. , Rogalski A. , Rutkowski J. , Mróz W.
• Języki publikacji: EN

Abstrakty

EN

This paper presents results of experimental efforts pointed towards morphology improvement of HgCdTe layers grown by MOCVD on GaAs substrates. Selected growth parameters on morphology state are presented. The substrate issues like its quality and crystallographic orientation have been discussed. Also influence of HgCdTe layer thickness on its surface roughness is described. It is shown that extensive characterization studies using accessible equipments and methods: atomic force microscopy (AFM), secondary electron microscopy (SEM), laser scatterometer and Nomarski microscopy, have provided invaluable information about the correlation between defect formation and the influence of specific growth parameters.

Słowa kluczowe

EN

HgCdTe MOCVD growth; layer morphology; surface smoothness

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2009
• Tom: Vol. 57, nr 2
• Strony: 139--146
• Opis fizyczny: Bibliogr. 24 poz., rys.

Twórcy

autor

Madejczyk P.

autor

Piotrowski A.

autor

Kłos K.

autor

Gawron W.

autor

Rogalski A.

autor

Rutkowski J.

autor

Mróz W.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St. , 00-908, Warsaw, Poland,

Bibliografia

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