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Insight into performance of quantum dot infrared photodetectors

Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In the paper, an algorithm for theoretical evaluation of dark and illumination characteristics of quantum dot infrared photodetectors (QDIPs) is presented. The developed algorithm is based on a model previously published by Ryzhii and co-workers. In our considerations it is assumed that both thermionic emission and field-assisted tunnelling mechanisms determine the dark current of quantum dot detectors. The model permits to calculate the dark current, current gain, average number of electrons in quantum dots, photocurrent, and detector responsivity as a function of the structural parameters. Moreover, it explains some features of QDIP characteristics. In several cases, the theoretical predictions are compared with experimental data. Good agreement between both kinds of data has been obtained.
Słowa kluczowe
Rocznik
Strony
103--116
Opis fizyczny
Bibliogr. 20 poz., rys.
Twórcy
autor
autor
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland, rogan@wat.edu.pl
Bibliografia
  • [1] S.D. Gunapala and S.Y. Bandara, "GaAs/AlGaAs based quantum well infrared photodetector focal plane arrays", in Handbook of Infrared Detection Technologies, edited by M. Henini and M. Razeghi, pp. 83-119, Elsevier, Oxford, 2002.
  • [2] A. Rogalski, "Quantum well photoconductors in infrared detector technology", J. Appl. Phys. 93, 4355-4391 (2003).
  • [3] E. Towe and D. Pan, "Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors", IEEE J. Sel. Top. Quant. 6,408-421 (2000).
  • [4] P. Boucaud and S. Sauvage, "Infrared photodetection with semiconductor self-assembled quantum dots", CR. Phys. 4, 1133-1154 (2003).
  • [5] P. Bhattacharya, AD. Stiff-Roberts, and S. Chakrabarti, "Midinfrared quantum dot photoconductors", in Mid-infrared Semiconductor Optoelectronics, pp. 487-513, edited by A. Krier, Springer Verlag, 2007.
  • [6] S. Krishna, S.D. Gunapala, S.y. Bandara, C. Hill, and D.Z. Ting, "Quantum dot based infrared focal plane arrays", Proc. IEEE 95, 1838-1852 (2007).
  • [7] E. Varley, M. Lenz, S.J. Lee, J.S. Brown, D.A Rarnirez, A Stintz, and S. Krishna, "Single bump, two-color quantum dot camera", Appl. Phys. Left. 91,081120 (2007).
  • [8] V. Ryzhii, I. Khmyrova, V. Pipa, V. Mitin, and M. Willander, "Device model for quantum dot infrared photodetectors and their dark-current characteristics", Semicond. Sci. Tech. 16, 331-338 (2001).
  • [9] Y. Ryzhii, I. Khmyrova, Y. Mitin, M. Stroscio, and M. Willander, "On the detectivity of quantum-dot infrared photodetectors", Appl. Phys. Left. 78, 3523-3525 (2001).
  • [10] Y. Ryzhii, "Analysis of the photocurrent in quantum dot infrared photodetectors", Jpn. J. Appl. Phys. 40, L148-L150 (2001).
  • [11] I. Vurgaftman, Y. Lam, and J. Singh, "Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers", Phys. Rev. B50, 14309-14326 (1994).
  • [12] J. Phillips, "Evaluation of the fundamental properties of quantum dot infrared detectors", J. Appl. Phys. 91, 4590-4594 (2002).
  • [13] A.D. Stiff-Roberts, "Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors", IEEE Photonic. Techn. L. 16, 867-869 (2004).
  • [14] G.M. Williams, R.E. DeWames, C.W. Farley, and R.J. Anderson, "Excess tunnel currents in AIGaAs/GaAs multiple quantum well infrared detectors", Appl. Phys. Left. 60, 1324-1326 (1992).
  • [15] H. Lim, B. Movaghar, S. Tsao, M. Taguchi, W. Zhang, A.A Quivy, and M. Razeghi, "Gain and recombination dynamics of quantum-dot infrared photodetectors", Phys. Rev. B74, 205321 (2006).
  • [16] J. Philips, P. Bhattacharya, S.W. Kennerly, D.W. Beekman, and M. Duta, "Self-assembled InAs-GaAs quantum dot intersubband detectors", IEEE J. Quantum Elect. 35, 936-943 (1999).
  • [17] J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, Cambridge University Press, New York, 2003.
  • [18] Z. Ye, J.C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, "Noise and photoconductive gain in InAs quantum-dot infrared photodetectors", Appl. Phys. Left. 83, 1234-1236 (2003).
  • [19] S.Y. Wang, M.C. Lo, H.Y. Hsiao, H.S. Ling, and C.P. Lee, "Temperature dependent responsivity of quantum dot infrared photodetectors", Infrared Phys. Techn. 50, 166-170 (2007).
  • [20] J.C. Campbell and A. Madhukar, "Quantum-dot infrared photodetectors", Proc. IEEE 95, 1815-1827 (2007).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPG5-0038-0029
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