Hydrogen and LPG sensing properties of SnO2 films obtained by direct oxidation of SILAR deposited SnS

• Autorzy: Mitra P. , Mondal S.
• Języki publikacji: EN

Abstrakty

EN

Hydrogen (H2) and liquid petroleum gas (LPG) sensing properties of SnO2 thin films obtained by direct oxidation of chemically deposited SnS films has been studied. The SnS film was prepared by a chemical technique called SILAR (Successive Ionic Layer Adsorption and Reaction). The sensor element comprises of a layer of chemically deposited SnO2 film with an overlayer of palladium (Pd) sensitiser. The Pd sensitiser layer was also formed following a chemical technique. The double layer element so formed shows significantly high sensitivity to H2 and LPG. The temperature variation of sensitivity was studied and the maximum sensitivity of 99.7% was observed at around 200°C for 1 vol% H2 in air. The response time to target gas was about 10 seconds and the sensor element was found to'recover to its original resistance reasonably fast. The maximum sensitivity of 98% for 1.6 vol% LPG was observed at around 325°C. The sensor response and recovery was reasonably fast (less than one minute) at this temperature.

Słowa kluczowe

EN

SILAR; SnO2 film; Pd catalyst; H2; LPG

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2008
• Tom: Vol. 56, nr 3
• Strony: 294--312
• Opis fizyczny: Bibliogr. 33 poz., rys.

Twórcy

autor

Mitra P.

autor

Mondal S.

• Department of Physics, The University of Burdan, Burdwan-713 104, India,

Bibliografia

• [1] J.F. McAleer, P.T. Moseley, J.O. W. Norris, and D.F. Williams, "Tin dioxide gas sensors", J. Chem. Faraday Trans. I 83, 1323-1346 (1987).
• [2] K.D. Schiebaum, U.K. Kirner, J.F. Geiger, and W. Gopel, "Schottky-barrier and conductivity gas sensors based upon Pd/Sn02 and Pt/Ti02", Sensors and Actuators B4, 87-94 (1991).
• [3] J.H. Yu, and G.M. Choi, "Selective CO gas detection of CuO- and ZnO-doped SnO2gas sensor", Sensors and Actuators 75, 56-61 (2001).
• [4] M. Egashira, T. Matsumoto, Y. Shimizu, and H. Iwanaga, "Gas sensing characteristic of tin oxide whiskers with different morphologies", Sensors and Actuators B6, 119-124 (1984).
• [5] G. Martinelli and M.C. Carotta, "Sensitivity to reducing gas as a function of energy barrier in SnO2 thick-film gas sensor", Sensors and Actuators B7, 717-720 (1992).
• [6] K.H. Song and S.J. Park, "Gas sensing characteristics of tin dioxide with small crystallites", J. Materials Science: Materials in Electronics 4, 249-253 (1993).
• [7] D.S. Vlachos, P.D. Skafidas, and J.N. Avarisiotis, "Transient effects of tin oxide CO sensors in the presence of water vapor", Appl. Phys. Lett. 63, 1760-1761 (1993).
• [8] K.D. Schierbaum, U. Wiemar, and W. Gopel, "Comparison of ceramic thick-film and thin-film chemical sensors based upon Sn02, Sensors and Actuators B7, 709-716 (1992).
• [9] M. Kanamori, Y. Okamato, Y. Ohya, and Y. Takahashi, "Thickness dependence of sensitivity of SnO2 film gas sensors", J. Cer. Soc. Jpn. 103, 113-116 (1995).
• [10] T. Suzuki, T. Yamazaki, and T. Noma, "High gas sensitivity of tin oxide ultrathin films deposited on glass and alumina substrates", J. Mater. Sci. 26, 6419-6427 (1991).
• [11] A. Srivastava, S.T. Lakshmikumar, K. Rashmi, and J. Kiran, "Gas sensing properties of nanocrystalline SnO2 prepared in solvent media using a microwave assisted technique", Sensors and Actuators 126, 583-587 (2007).
• [12] D. Lee, H. Jung, J. Kim, M. Lee, S. Ban, J. Huh, and D. Lee, "Explosive gas recognition system using thick film sensor array and neural network", Sensors and Actuators B 71, 90-98 (2000).
• [13] N.S. Baik, G. Sakai, K. Shimanoe, N. Miura, and N. Yamazoe, "Hydrothermal treatment of tin oxide sol solution for preparation of thin-film sensor with enhanced thermal stability and gas sensitivity", Sensors and Actuators B 65, 97-100 (2000).
• [14] G. Sberveglieri: "Recent advances in semi conducting thin-film gas sensors", Sensors and Actuators B26-27, 103-109 (1995).
• [15] G. Sberveglieri, L. Depero, S. Gropelli, and P. Nelli, "Heteroepitaxial growth of tungsten oxide films on sapphire for chemical gas sensors", Sensors and Actuators B26-27, 89-92 (1995).
• [16] N. Yamazoe, "New approaches for improving semiconductor gas sensors", Sensors and Actuators B5, 7-19 (1991).
• [17] M. Penza, C. Martucci, and G. Cassano, "NO" gas sensing characteristics of W03 thin films activated by noble metals (Pd, Pt, Au) layers", Sensors and Actuators B50, 52-59 (1998).
• [18] A. Ghosh and S. Basu, "Spray/CVD deposition and characterization of surface modified zinc oxide thick films for gas sensors", Mater. Chem. Phys. 27, 45-54 (1991).
• [19] F. Boccuzzi, E. Guglilminotti, and Chiorino, "IR study of gas sensing materials: NO interaction on ZnO and TiO2, pure or modified by metals", Sensors and Actuators 7, 645-650 (1992).
• [20] J. Mizsei, "Activation technology of SnO2 layers by metal particles from ultrathin metal film", Sensors and Actuators B 15-16, 328-333 (1993).
• [21] S.P.S. Arya, A. D'Amico, and E. Verona, "Study of sputtered ZnO-Pd thin films as solid state H2 and NH3 gas sensors", Thin Solid Films 157, 169-174 (1988).
• [22] P. Mitra and H. S. Maiti, "A wet-chemical process to form palladium oxide sensitiser layer on thin film zinc oxide based LPG sensor", Sensors and Actuators B97, 49-58 (2004).
• [23] P. Mitra and A.K. Mukhopadhyay, "Methane sensitivity of thin film ZnO", Bull. Pol. Ac.: Tech. 55, 281-285 (2007).
• [24] R.L. Call, N.K. Jaber. K. Seshan, and Jr. J. Whyte, "Structural and electronic properties of three aqueous deposited films: CdS, CdO, ZnO for semiconductor and photovoltaic applications", Solar Energy Materials 2, 373-380 (1980).
• [25] Y.F. Nicolau, "Solution deposition of thin solid compound films by a successive ionic layer adsorption and reaction", Appl. Surf, Set'. 22/23, 1061-1074 (1985).
• [26] Y.F. Nicolau and J.C. Menard, "Solution growth of zinc sulphide, cadmium sulphide and zinc cadmium sulphide thin films by the successive ionic layer adsorption and reaction process: Growth mechanism", J. Cryst. Growth 92, 128-142 (1988).
• [27] YF. Nicolau, M. Dupuy and M. Brunei, "Zinc sulphide, cadmium sulphide and zinc cadmium sulphide films by the successive ionic layer adsorption and reaction process", J. Electrochem. Soc. 137, 2915-2924 (1990).
• [28] S. Mondal and P. Mitra, "Preparation of nanocrystalline SnS thin films by SILAR", Material Science Research India 5 (1), (2008), (to be published).
• [29] Joint Committee on Powder Diffraction Standards (JCPDS), International Centre for Diffraction Data, Swarthmore, card no. 33-1375, PA (1980).
• [30] Joint Committee on Powder Diffraction Standards (JCPDS), International Centre for Diffraction Data, Swarthmore, card no. 21-1250, PA (1980).
• [31] H. Nanto, T. Minami,and S. Takata, "Ammonia. gas sensor using sputtered zinc oxide thin film", J. Appl. Phys. 60,482-484 July (1986).
• [32] L. Jianping, W. Yue, G. Xiaoguang, M. Qing, W. Li, and H. Jinghong, 'H2S sensing properties of the SnO2-based thin films", Sensors and Actuators 65, 111-113 (2000),
• [33] Y.Y. Malyshev, A. A. Vasiliev, A.V. Eryshkin, E.A. Koltypin, Y.I.Shubin, A.I.Buturlin, Y.A. Zaikin, and G.B. Chakhunashvili, "Gas sensitivity of SnO2 and ZnO thin-film resistive senSors to hydrocarbons, carbon monoxide and hydrogen", Sensors and Actuator 10, 11-14 (1992).