Conductive atomic force microscope for investigation of thin-film gate insulators

• Autorzy: Wielgoszewski G. , Gotszlak T. , Woszczyna M. , Zawierucha P. , Zschech E.
• Języki publikacji: EN

Abstrakty

EN

In modern microelectronics progress has been made towards low power ultra large-scale integration (ULSI), and nano-structure devices such as single electron transistors and quantum dots. In this technology application of new materials, which includes high-k dielectrics for the MOSFET transistors, with extraordinary purity and uniformity is required. Failure analysis and reliability investigations of such films very often requires high-resolution local measurements of electrical surface parameters. This kind of experiments can be performed using conductive atomic force microscopy, which provides simultaneous measurement of surface topography and current flowing through the investigated layer. In order to acquire reliable data, there was designed a precise measurement and control system, which included a low-noise current-to-voltage converter of picoampere resolution, a scanning stage with control electronics and a data acquisition system. In the paper we describe the architecture of the de-signed and applied experimental set-up. We also present results of simultaneous measurements of topography and current on gold and highly oriented pyrolytic graphite (HOPG).

Słowa kluczowe

EN

AFM; conductive probe; thin-film oxides

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2008
• Tom: Vol. 56, nr 1
• Strony: 39--44
• Opis fizyczny: Bibliogr. 9 poz., rys., tab.

Twórcy

autor

Wielgoszewski G.

autor

Gotszlak T.

autor

Woszczyna M.

autor

Zawierucha P.

autor

Zschech E.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Zygmunta Janiszewskiego St., 50-372 Wroclaw, Poland,

Bibliografia

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• [3] M. Gail Jones et al., "Atomic force microscopy with touch: educational applications", Science, Technology and Education of Microscopy: an Overview, 776-786 (2003).
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• [5] OPA 128 Difet Electrometer-Grade Operational Amplifier - Datasheet, Burr-Brown/Texas Instruments, 199512007, http://focus.ti.com/lit/ds/symlink/opa 128.pdf.
• [6] ISOl24 Precision Isolation Amplifier - Datasheet, Texas Instruments, 1997-2005, http://focus.ti.com/lit/ds/symlink/ iso124.pdf.
• [7] TGQI - NT-MDT, http://www.ntmdt-tips.com/catalog/gratings/afm_cal/products/TGQ1.html.
• [8] S. Banerjee et al., "Conductivity landscape of highly oriented pyrolytic graphite surfaces containing ribbons and edges", Phys. Rev. B 72, 075418 (2005).
• [9] T. Trenkler et al., "Evaluating probes for 'electrical' atomic force microscopy", J. Vac. Sci. Technol. B 18(1), 418-427 (2000).