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A high-efficiency Class E inverter - computer model, laboratory measurements and SPICE simulation

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Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The paper presents the theoretical background, computer model, laboratory measurements and SPICE simulation results of a 323 W, 1 MHz Class E inverter operating with an efficiency of 97%. The inverter is built around a CoolMOS transistor from Infineon Technologies. The transistor belongs to a new generation of high quality, optimized for low conduction losses and high speed switching power MOSFET-s. The presented computer model of Class E inverter is based on a state-space description and allows computing the inverter parameters for the optimum operation. Its validity has been confirmed experimentally. The SPICE simulation of the inverter has been also carried out in order to obtain better agreement between measurement and calculation results.
Słowa kluczowe
Rocznik
Strony
411--417
Opis fizyczny
Bibliogr. 12 poz., rys., tab.
Twórcy
  • Department of Power Electronics, Electric Drives and Robotics, Silesian University of Technology, 2 B. Krzywoustego St., 44-100 Gliwice, Poland, zbigniew.kaczmarczyk@polsl.pl
Bibliografia
  • [1] N.O. Sokal and A.D. Sokal, "Class E - a new class of high-efficiency tuned single-ended switching power amplifiers", IEEE 1. Solid-State Circuits SC-IO (3),168-176 (1975).
  • [2] N.O. Sokal, "Class-E RF power amplifiers", QEX Communications Quarterly 204, 9-20 (2001).
  • [3] EH. Raab, "Idealized operation of the Class E tuned power amplifier", IEEE Trans. Circuits and Systems CAS-24 (12), 725-735 (1977).
  • [4] M. Kazimierczuk, "Theory of high-frequency Class E power amplifier", Thesis on Electrotechnics 25 (4), 957-986 (1979).
  • [5] http://www.infineon.com. [6] C.P. Avratoglou, N.c. Voulgaris, and El. Ioannidou, "Analysis and design of a generalised Class E tuned power amplifier", IEEE Trans. Circuits and Systems 36 (8), 1068-1079 (1989).
  • [7] R.E. Zulinski and J.W. Steadman, "Class E power amplifiers and frequency multipliers with finite DC-feed inductance", IEEE Trans. Circuits and Systems 34 (9), 1074-1087 (1987).
  • [8] M.K. Kazimierczuk and K. Puczko, "Class E tuned power amplifier with antiparallel diode or series diode at switch, with any loaded Q and switch duty cycle", IEEE Trans. Circuits and Systems 36 (9), 1201-1209 (1989).
  • [9] G.J. Krausse, "1kW Class-E 13.56MHz single device RF generator for industrial applications", Application Note -9300-0001, Directed Energy, Inc., www.ixysrf.com.
  • [10] Z. Kaczmarczyk, "An analysis of high frequency power electronic Class E inverter", PhD. Thesis, Silesian University of Technology, Gliwice, 1996.
  • [11] Z. Kaczmarczyk, "Improving properties of high-frequency Class E inverters", Archives of Electrical Engineering LIII (4), 449-459 (2004).
  • [12] L.O. Chua and P.M. Lin, Computer-aided Analysis of Electronic Circuits, WNT, Warszawa, 1981.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPG5-0028-0019
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