Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor

• Autorzy: Kordalski W. , Polowczyk M. , Panek M.
• Języki publikacji: EN

Abstrakty

EN

We propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The predicted absolute sensitivity of the new sensor can reach as high value as 1000 V/T Furthermore, due to its original structure, the spatial resolution of the new MAGFET is very high which makes this device especially useful in reading magnetically encoded data or magnetic pattern recognition.

Słowa kluczowe

EN

magnetic field-effect transistor (MAGFET); magnetic field measurement; magnetic pattern recognition

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2007
• Tom: Vol. 55, nr 3
• Strony: 325--329
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Kordalski W.

autor

Polowczyk M.

autor

Panek M.

• Department of Microelectronic Systems, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 Narutowicza St., 80-952 Gdansk, Poland,

Bibliografia

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• [4] W. Kordalski, "Two-gate enhancement-mode MOS transistor", Polish Patent no.185178, 2002.
• [5] W Kordalski, M. Polowczyk, J. Czerwinski, J. Dzierzko, and L. Dobrzanski, "Device for measurement and/or detection of magnetic field", Polish Patent Application no. P346093, 2001.[
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• [10] J.W.A. Kluge and WA. Langheinrich, "An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G", IEEE Trans. on Electron Devices ED-46 (1), 89-95 (1999).
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