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Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor

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We propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The predicted absolute sensitivity of the new sensor can reach as high value as 1000 V/T Furthermore, due to its original structure, the spatial resolution of the new MAGFET is very high which makes this device especially useful in reading magnetically encoded data or magnetic pattern recognition.
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Bibliogr. 12 poz., rys., tab.
  • Department of Microelectronic Systems, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 Narutowicza St., 80-952 Gdansk, Poland,
  • [1] Z. Li and X. Sun, "Weak magnetic field pattern detection by CMOS magnetic latch", IEEE Electron Devices Letters 24 (10), 652-654 (2003).
  • [2] N. 0 and A. Nathan, "CCD-based sensor array for magnetic pattern recognition", IEDM Tech. Dig., 167-170 (1995).
  • [3] H. Baltes and R. Popovic, "Integrated semiconductor magnetic field sensor", Proc. IEEE 74 (8),1107-1132, (1986).
  • [4] W. Kordalski, "Two-gate enhancement-mode MOS transistor", Polish Patent no.185178, 2002.
  • [5] W Kordalski, M. Polowczyk, J. Czerwinski, J. Dzierzko, and L. Dobrzanski, "Device for measurement and/or detection of magnetic field", Polish Patent Application no. P346093, 2001.[
  • [6] S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien, 1984.
  • [7] K. Yamaguchi, "Field-dependent mobility model for two dimensional numerical analysis of MO SF ET's", IEEE Trans. on Electron Devices ED-26 (7), 1068-1074 (1979).
  • [8] D. Tomaszewski and W Kordalski, "Simulation with the use of ATLAS (Silvaco Int., 1998)", unpublished.
  • [9] R. Popovic and H. Baltes, "A CMOS magnetic field sensor", IEEE J. Solid-State Circuits SC-18 (4), 426-428 (1983).
  • [10] J.W.A. Kluge and WA. Langheinrich, "An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G", IEEE Trans. on Electron Devices ED-46 (1), 89-95 (1999).
  • [11] R. Rodriguez-Torres, E.A. Gutierrez-Dominguez, R. Klima, and S. Selberherr, "Analysis of split-drain MAGFETs", IEEE Trans. on Electron Devices ED-51 (12), 2237-2245 (2004).
  • [12] S.M. Sze, Physics of Semiconductor Devices, John Willey & Sons, 1981.
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